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2020年刊物论文
1.High mobility germanium-on-insulator p-channel FinFETs.SCIENCE CHINA-INFORMATION SCIENCES.2021.64.4.Liu, Huan; Han, Genquan; Zhou, Jiuren; Liu, Yan; Hao, Yue
2.Training a Multi-Layer Photonic Spiking Neural Network With Modified Supervised Learning Algorithm Based on Photonic STDP.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS.2021.27.2.Xiang, Shuiying; Ren, Zhenxing; Zhang, Yahui; Song, Ziwei; Guo, Xingxing; Han, Genquan; Hao, Yue
3.Preparation and improved photoelectrochemical properties of InGaN/GaN photoanode with mesoporous GaN Distributed Bragg reflectors.JOURNAL OF ALLOYS AND COMPOUNDS.2021.853.Cao, Dezhong; Xiao, Hongdi; Yang, Xiaokun; Ma, Xiaohua
4.Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN.JOURNAL OF ALLOYS AND COMPOUNDS.2021.853.Chen, Jiabo; Bian, Zhaoke; Liu, Zhihong; Zhu, Dan; Duan, Xiaoling; Wu, Yinhe; Jia, Yanqing; Ning, Jing; Zhang, Jincheng; Hao, Yue
5.Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2021.36.2.Zhang, Xiao-Yu; Yang, Lin-An; Yang, Wen-lu; Li, Yang; Ma, Xiao-Hua; Hao, Yue
6.Two-dimensional carbon allotropes with tunable direct band gaps and high carrier mobility.APPLIED SURFACE SCIENCE.2021.537.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
7.Temperature-dependent characteristics of Schottky barrier diode on heterogeneous beta-Ga2O3((2)over-bar01)-Al2O3-Si Substrate.JOURNAL OF PHYSICS D-APPLIED PHYSICS.2021.54.3.Wang, Yibo; Xu, Wenhui; Han, Genquan; You, Tiangui; Mu, Fengwen; Hu, Haodong; Liu, Yan; Zhang, Xinchuang; Huang, Hao; Suga, Tadatomo; Ou, Xin; Ma, Xiaohua; Hao, Yue
8.Simulation research of high-efficiency unidirectional vertical coupling grating couplers for optical through-silicon vias in 3D optoelectronic integrated circuits.OPTICS COMMUNICATIONS.2021.479.Zhang, Junqin; Zhang, Ci; Liang, Guoxian; Yang, Yintang
9.Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2021.36.1.Yang, Wen-Lu; Yang, Lin-An; Zhang, Xiao-Yu; Li, Yang; Ma, Xiao-Hua; Hao, Yue
10.Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films.SCIENTIFIC REPORTS.2020.10.1.Cao, Dezhong; Wang, Bo; Lu, Dingze; Zhou, Xiaowei; Ma, Xiaohua
11.Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures.NANOSCALE RESEARCH LETTERS.2020.15.1.Han, Tao; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Kun
12.Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices.APPLIED PHYSICS LETTERS.2020.117.24.Zhou, Ziliang; Yang, Mei; Fu, Zhen; Wang, Hong; Ma, Xiaohua; Gao, Haixia
13.Low-temperature processed high-performance visible-transparent Ga2O3 solar blind ultraviolet photodetectors with the indium-tin-oxide electrode.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.12.Li, Zhe; Xu, Yu; Cheng, Yaolin; Zhang, Jiaqi; Chen, Dazheng; Yao, Danyang; Feng, Qian; Xu, Shengrui; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
14.A novel two-dimensional sp-sp(2)-sp(3) hybridized carbon nanostructure with a negative in-plane Poisson ratio and high electron mobility.COMPUTATIONAL MATERIALS SCIENCE.2020.185.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
15.Modulating the band alignment and current conduction mechanism of ZrO2/In-0.2 Ga0.8As gate stack by atomic-layer-deposited ZnO passivation layer.THIN SOLID FILMS.2020.714.Liu, Chen; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen; Wang, Zhuofan
16.Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process.NANOSCALE RESEARCH LETTERS.2020.15.1.Chen, Ruibo; Liu, Hongxia; Song, Wenqiang; Du, Feibo; Zhang, Hao; Zhang, Jikai; Liu, Zhiwei
17.Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.MATERIALS.2020.13.22.Wu, Jinxing; Li, Peixian; Xu, Shengrui; Zhou, Xiaowei; Tao, Hongchang; Yue, Wenkai; Wang, Yanli; Wu, Jiangtao; Zhang, Yachao; Hao, Yue
18.Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate.AIP ADVANCES.2020.10.11.Zhang, Weihang; Liu, Xi; Fu, Liyu; Zhang, Jincheng; Zhao, Shenglei; Hao, Yue
19.Surface termination effects on the electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition.CHINESE PHYSICS B.2020.29.11.Fan, Ji-Bin; Ling, Shan-Ya; Liu, Hong-Xia; Duan, Li; Zhang, Yan; Guo, Ting-Ting; Wei, Xing; He, Qing
20.A 0.3-6 GHz noise and distortion cancelling LNA achieving an NF of 2.8 +/- 0.3 dB in 0.18-mu m SiGe BiCMOS process.MICROELECTRONICS JOURNAL.2020.105.Li, Zhenrong; Duan, Yiming; Li, Zhen; Wang, Zeyuan; Zhuang, Yiqi
21.Metallic and semiconducting carbon allotropes comprising of pentalene skeletons.DIAMOND AND RELATED MATERIALS.2020.109.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
22.Effective mass anisotropy of Si-Ge alloys: a discussion of the effective mass tensor.PHYSICA SCRIPTA.2020.95.11.Song, Yanxing; Chai, Changchun; Fan, Qingyang; Zhang, Wei; Yang, Yintang
23.Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO(2)fluid.APPLIED PHYSICS EXPRESS.2020.13.11.Wang, Menghua; Yang, Mingchao; Liu, Weihua; Yang, Songquan; Liu, Jiang; Han, Chuanyu; Geng, Li; Hao, Yue
24.Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth.SCIENTIFIC REPORTS.2020.10.1.An, Jiadai; Dai, Xianying; Guo, Runqiu; Feng, Lansheng; Zhao, Tianlong
25.Adual-band high-gain EBGresonator antenna fed by dipole inCMOSprocess.MICROWAVEAND OPTICAL TECHNOLOGY LETTERS.Lan, Haokun; Zhang, Jianqiang; Liu, Maliang; Yang, Yintang
26.A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance.NANOSCALE RESEARCH LETTERS.2020.15.1.Chen, Shupeng; Wang, Shulong; Liu, Hongxia; Han, Tao; Xie, Haiwu; Chong, Chen
27.Al-doped GeS nanosheet as a promising sensing material for O-contained volatile organic compounds detection.APPLIED SURFACE SCIENCE.2020.527.Pu, Kaiwen; Dai, Xianying; Bu, Yuyu; Guo, Runqiu; Tao, Wenluo; Jia, Difan; Song, Jianjun; Zhao, Tianlong; Feng, Lansheng
28.Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate.MATERIALS LETTERS.2020.277.Ma, Depu; Xu, Shengrui; Tao, Hongchang; Li, Wen; Peng, Ruoshi; Du, Jinjuan; Fan, Xiaomeng; Zhao, Ying; Zhang, Jincheng; Hao, Yue
29.Metal oxide heterojunctions for high performance solution grown oxide thin film transistors.APPLIED SURFACE SCIENCE.2020.527.He, Fuchao; Qin, Yu; Wan, Liaojun; Su, Jie; Lin, Zhenhua; Zhang, Jincheng; Chang, Jingjing; Wu, Jishan; Hao, Yue
30.Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light.APPLIED CATALYSIS B-ENVIRONMENTAL.2020.274.Chen, Zhiwei; Bu, Yuyu; Wang, Lin; Wang, Xiao; Ao, Jin-Ping
31.Enhancing the Performance of Two-Terminal All-Perovskite Tandem Solar Cells by the Optical Coupling Layer Beyond the Antireflection Function.IEEE PHOTONICS JOURNAL.2020.12.5.Liu, Chenbo; Zhang, Chunfu; Pang, Shangzheng; Dong, Hang; Zhang, Zeyang; Chen, Dazheng; Zhu, Weidong; Zhang, Jincheng; Hao, Yue
32.Dynamic back-off chain-building scheme based on network state partition.OPTICAL ENGINEERING.2020.59.10.Zhang, Junqin; Lin, Hongmei; Liang, Guoxian; Zhang, Ci; Yang, Yintang
33.Nonlinear Bound States in the Continuum of Etchless Lithium Niobate Metasurfaces.IEEE PHOTONICS JOURNAL.2020.12.5.Yang, Qiyu; Liu, Yan; Gan, Xuetao; Fang, Cizhe; Han, Genquan; Hao, Yue
34.Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.10.Wang, Xiameng; Duan, Baoxing; Yang, Xin; Yang, Yintang
35.Oxygen annealing impact on beta-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density.APPLIED PHYSICS LETTERS.2020.117.13.Lv, Yuanjie; Liu, Hongyu; Wang, Yuangang; Fu, Xingchang; Ma, Chunlei; Song, Xubo; Zhou, Xingye; Zhang, Yanni; Dong, Pengfei; Du, Hanghai; Liang, Shixiong; Han, Tingting; Zhang, Jincheng; Feng, Zhihong; Zhou, Hong; Cai, Shujun; Hao, Yue
36.Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity.SCIENCE CHINA-MATERIALS.Yu, Tianqi; He, Fuchao; Zhao, Jianhui; Zhou, Zhenyu; Chang, Jingjing; Chen, Jingsheng; Yan, Xiaobing
37.A30-GHzlow-powerCMOS LNAfor5Gcommunication systems.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS.Liu, Jiye; Wu, Liang; Zhu, Zhangming; Liu, Shubin
38.A 99.15% energy-reduced switching scheme based on HSRS coarse-fine architecture for SAR ADCs.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.Yue, Peiyi; Li, Yongyuan; Liu, Shubin; Zhu, Zhangming
39.Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers.MATERIALS.2020.13.18.Gao, Yuan; Xu, Shengrui; Peng, Ruoshi; Tao, Hongchang; Zhang, Jincheng; Hao, Yue
40.Direct and quasi-direct band gap silicon allotropes with low energy and strong absorption in the visible for photovoltaic applications.RESULTS IN PHYSICS.2020.18.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
41.The crystal anisotropy effect of MAPbI(3) perovskite on optoelectronic devices.MATERIALS TODAY ENERGY.2020.17.Zhao, Peng; Su, Jie; Lin, Zhenhua; Wang, Jiaping; Zhang, Jincheng; Hao, Yue; Ouyang, Xiaoping; Chang, Jingjing
42.Physics based scalable inductance model for three-dimensional solenoid inductors.MICROELECTRONICS JOURNAL.2020.103.Liu, Yang; Zhu, Zhangming; Liu, Xiaoxian; Lu, Qijun; Yin, Xiangkun; Yang, Yintang
43.A 10-bit SAR ADC using novel LSB-first successive approximation for reduced bitcycles.MICROELECTRONICS JOURNAL.2020.103.Wang, Ling; Zhang, Chenggao; Wang, Jingyu; Ma, Rui; Zhu, Zhangming
44.An optimization design strategy of 1-3 piezocomposite ultrasonic transducer for imaging applications.MATERIALS TODAY COMMUNICATIONS.2020.24.Chen, Dongdong; Hou, Chenxue; Fei, Chunlong; Li, Di; Lin, Pengfei; Chen, Jun; Yang, Yintang
45.Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode.APPLIED SCIENCES-BASEL.2020.10.17.Wang, Ying; Li, Liu-An; Yang, Lin-An; Ao, Jin-Ping; Hao, Yue
46.Electrical performance of InAs/GaAs(0.1)Sb(0.9)heterostructure junctionless TFET with dual-material gate and Gaussian-doped source.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.9.Xie, Haiwu; Liu, Hongxia; Chen, Shupeng; Han, Tao; Wang, Shulong
47.Spike Sequence Learning in a Photonic Spiking Neural Network Consisting of VCSELs-SA With Supervised Training.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS.2020.26.5.Song, Ziwei; Xiang, Shuiying; Ren, Zhenxing; Han, Genquan; Hao, Yue
48.Influence Mechanism of Barium Interface Layer on the Interfacial Properties of n-Type 4H-SiC Metal-Oxide-Semiconductor Capacitors.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.2020.257.12.Bai, Zhiqiang; Tang, Xiaoyan; Zhang, Yimeng; Jia, Yifan; Jie, Jiamin; Song, Qingwen; Zhang, Yuming
49.Six novel carbon and silicon allotropes with their potential application in photovoltaic field.JOURNAL OF PHYSICS-CONDENSED MATTER.2020.32.35.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
50.All-Inorganic CsPbIxBr3- x Perovskite Solar Cells: Crystal Anisotropy Effect.ADVANCED THEORY AND SIMULATIONS.2020.3.10.Zhao, Peng; Su, Jie; Lin, Zhenhua; Wang, Jiaping; Zhang, Jincheng; Hao, Yue; Ouyang, Xiaoping; Chang, Jingjing
51.High frequency needle ultrasonic transducers based on Mn doped piezoelectric single crystal.JOURNAL OF ALLOYS AND COMPOUNDS.2020.832.Yang, Xiao; Li, Zhaoxi; Fei, Chunlong; Liu, Yangbin; Li, Di; Hou, Shang; Zhang, Lin; Li, Fei; Yang, Yintang; Zhou, Qifa; Xu, Zhuo
52.The Investigation of Hybrid PEDOT:PSS/beta-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors.NANOSCALE RESEARCH LETTERS.2020.15.1.Zhang, Tao; Shen, Yixian; Feng, Qian; Tian, Xusheng; Cai, Yuncong; Hu, Zhuangzhuang; Yan, Guangshuo; Feng, Zhaoqing; Zhang, Yachao; Ning, Jing; Xu, Yongkuan; Lian, Xiaozheng; Sun, Xiaojuan; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng; Hao, Yue
53.Heteroepitaxial growth of a-Ga 2 O 3 thin films on a-, c- and r -plane sapphire substrates by low-cost mist-CVD method.JOURNAL OF ALLOYS AND COMPOUNDS.2020.831.Cheng, Yaolin; Xu, Yu; Li, Zhe; Zhang, Jiaqi; Chen, Dazheng; Feng, Qian; Xu, Shengrui; Zhou, Hong; Zhang, Jincheng; Hao, Yue; Zhang, Chunfu
54.Low Voltage Operating 2D MoS(2)Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2)Gate Structure.NANOSCALE RESEARCH LETTERS.2020.15.1.Zhang, Siqing; Liu, Yan; Zhou, Jiuren; Ma, Meng; Gao, Anyuan; Zheng, Binjie; Li, Lingfei; Su, Xin; Han, Genquan; Zhang, Jincheng; Shi, Yi; Wang, Xiaomu; Hao, Yue
55.Particle Swarm Optimization Algorithm-Based Design Method for Ultrasonic Transducers.MICROMACHINES.2020.11.8.Chen, Dongdong; Zhao, Jianxin; Fei, Chunlong; Li, Di; Zhu, Yuanbo; Li, Zhaoxi; Guo, Rong; Lou, Lifei; Feng, Wei; Yang, Yintang
56.Tin selenide for high-power and ultrafast Q-switched fiber laser.OPTIK.2020.216.You, Tianqi; Liu, Mengli; Liu, Ximei; Jia, Renxu; Peng, Bo
57.Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition.NANOMATERIALS.2020.10.8.Yang, Kun; Liu, Hongxia; Wang, Shulong; Yu, Wenlong; Han, Tao
58.Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures*.CHINESE PHYSICS B.2020.29.8.Hu, Sheng; Yang, Ling; Mi, Min-Han; Hou, Bin; Liu, Sheng; Zhang, Meng; Wu, Mei; Zhu, Qing; Wu, Sheng; Lu, Yang; Zhu, Jie-Jie; Zhou, Xiao-Wei; Lv, Ling; Ma, Xiao-Hua; Hao, Yue
59.Two novel SiC phases: structure, mechanical, and transport properties.MATERIALS RESEARCH EXPRESS.2020.7.8.Kong, Linchun; Chai, Changchun; Song, Yanxing; Zhang, Wei; Zhang, Zheren; Yang, Yintang
60.Wide-Range Tunable Narrow Band-Stop Filter Based on Bilayer Graphene in the Mid-Infrared Region.IEEE PHOTONICS JOURNAL.2020.12.4.Wang, Yindi; Liu, Hongxia; Wang, Shulong; Cai, Ming
61.Novel multi -layer -composites design for ultrasonic transducer applications.COMPOSITE STRUCTURES.2020.245.Lin, Pengfei; Zhang, Lin; Fei, Chunlong; Li, Di; Wu, Runcong; Chen, Qiang; Hou, Chenxue; Yang, Yintang
62.A Digital Controlled Accurate Linear-in-dB Variable Gain Amplifier Based on Current-Steering Structure with Compensation Circuit.CIRCUITS SYSTEMS AND SIGNAL PROCESSING.Li, Zhenrong; Cheng, Xiayu; Wang, Zeyuan; Li, Zhen; Zhuang, Yiqi
63.Observation of room temperature ferromagnetism and exchange bias in a 55 Mn + ion -implanted unintentionally doped beta-Ga2O3 single crystal.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS.2020.506.Peng, Bo; Zhang, Yuming; Wang, Yutian; Yuan, Lei; Dong, Linpeng; Jia, Renxu
64.First-Principles Study on III-Nitride Polymorphs: AlN/GaN/InN in thePmn2(1)Phase.MATERIALS.2020.13.14.Zhang, Zheren; Chai, Changchun; Zhang, Wei; Song, Yanxing; Kong, Linchun; Yang, Yintang
65.Charge-Transporting-Layer-Free, Vacuum-Free, All-Inorganic CsPbIBr(2)Perovskite Solar Cells Via Dipoles-Adjusted Interface.NANOMATERIALS.2020.10.7.Zhang, Wentao; Zhang, Zeyulin; Jiang, Qubo; Wei, Ziming; Zhang, Yuting; You, Hailong; Chen, Dazheng; Zhu, Weidong; He, Fengqin; Zhang, Chunfu
66.Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO(2)and Al(2)O(3)gate insulators*.CHINESE PHYSICS B.2020.29.8.Zhao, Yao-Peng; Wang, Chong; Zheng, Xue-Feng; Ma, Xiao-Hua; Liu, Kai; Li, Ang; He, Yun-Long; Hao, Yue
67.Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms.NANOMATERIALS.2020.10.7.Li, Dongxun; Zhang, Yuming; Tang, Xiaoyan; He, Yanjing; Yuan, Hao; Jia, Yifan; Song, Qingwen; Zhang, Ming; Zhang, Yimen
68.A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.7.Mao, Wei; He, Yuanhao; Yang, Cui; Wang, Haiyong; Du, Ming; Zheng, Xuefeng; Wang, Xiaofei; Wang, Chong; Zhang, Jincheng; Hao, Yue
69.Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current.SOLID-STATE ELECTRONICS.2020.169.Zhang, Yanni; Zhang, Jincheng; Zhou, Hong; Zhang, Tao; Wang, Haiyong; Feng, Zhaoqing; Hao, Yue
70.Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory.NANOSCALE RESEARCH LETTERS.2020.15.1.Peng, Yue; Han, Genquan; Liu, Fenning; Xiao, Wenwu; Liu, Yan; Zhong, Ni; Duan, Chungang; Feng, Ze; Dong, Hong; Hao, Yue
71.Design and fabrication of field-plated normally off beta-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application.APPLIED PHYSICS LETTERS.2020.116.24.Feng, Zhaoqing; Cai, Yuncong; Li, Zhe; Hu, Zhuangzhuang; Zhang, Yanni; Lu, Xing; Kang, Xuanwu; Ning, Jing; Zhang, Chunfu; Feng, Qian; Zhang, Jincheng; Zhou, Hong; Hao, Yue
72.The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.2020.9.5.Zhao, Ying; Xu, Shengrui; Feng, Lansheng; Lin, Zhiyu; Li, Peixian; Zhang, Jincheng; Hao, Yue
73.A 20-MHz BW MASH Sigma-Delta Modulator with Mismatch Noise Randomization for Multi-Bit DACs.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2020.29.7.Di, Li; Fei, Chunlong; Zhang, Qidong; li, Yani; Yang, Yintang
74.Characterization of Single Event Cell Upsets in a Radiation Hardened SRAM in a 40 nm Bulk CMOS Technology.ELECTRONICS.2020.9.6.Yang, Guoqing; Yu, Junting; Zhang, Jincheng; Liu, Xiangyuan; Chen, Qiang
75.A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices.MATERIALS TODAY PHYSICS.2020.13.Lin, C. -Y.; Chen, P. -H.; Chang, T. -C.; Huang, W. -C.; Tan, Y. -F.; Lin, Y. -H.; Chen, W. -C.; Lin, C. -C.; Chang, Y. -F.; Chen, Y. -C.; Huang, H. -C.; Ma, X. -H.; Hao, Y.; Sze, S. M.
76.A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM.SPIN.2020.10.2.Zhang, Li; Tang, Hualian; Xu, Beilei; Zhuang, Yiqi; Bao, Junlin
77.Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure.AIP ADVANCES.2020.10.6.Zheng, Xue-Feng; Chen, Guan-Jun; Wang, Xiao-Hu; Wang, Ying-Zhe; Wang, Chong; Mao, Wei; Lu, Yang; Hou, Bin; Mi, Min-Han; Lv, Ling; Cao, Yan-Rong; Zhu, Qing; Guo, Gang; Ma, Pei-Jun; Ma, Xiao-Hua; Hao, Yue
78.Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors.APPLIED PHYSICS LETTERS.2020.116.22.Zhu, Jiejie; Zhang, Yingcong; Uren, Michael J.; Liu, Siyu; Wang, Pengfei; Mi, Minhan; Hou, Bin; Yang, Ling; Kuball, Martin; Ma, Xiaohua; Hao, Yue
79.Performance of H-diamond MOSFETs with high temperature ALD grown HfO2 dielectric.DIAMOND AND RELATED MATERIALS.2020.106.Ren, Zeyang; Lv, Dandan; Xu, Jiamin; Su, Kai; Zhang, Jinfeng; Wang, Dong; Wu, Yong; Zhang, Jincheng; Hao, Yue
80.Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.6.Zhu, Jiejie; Zhang, Yingcong; Ma, Xiaohua; Liu, Siyu; Jing, Siqi; Zhu, Qing; Mi, Minhan; Hou, Bin; Yang, Ling; Uren, Michael J.; Kuball, Martin; Hao, Yue
81.Optical properties evolution of GaN film grown via lateral epitaxial overgrowth.APPLIED SURFACE SCIENCE.2020.513.Zhao, Ying; Xu, Shengrui; Zhang, Jincheng; Zhang, Chunfu; Li, Peixian; Lin, Zhiyu; Zhang, Yachao; Zhou, Hong; Wang, Zhan; Peng, Ruoshi; Fan, Xiaomeng; Du, Jinjuan; Hao, Yue
82.ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles.NANOSCALE RESEARCH LETTERS.2020.15.1.Liu, Huan; Peng, Yue; Han, Genquan; Liu, Yan; Zhong, Ni; Duan, Chungang; Hao, Yue
83.High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.NANOSCALE RESEARCH LETTERS.2020.15.1.Zhang, Yachao; Li, Yifan; Wang, Jia; Shen, Yiming; Du, Lin; Li, Yao; Wang, Zhizhe; Xu, Shengrui; Zhang, Jincheng; Hao, Yue
84.Investigation of beta-Ga2O3 films and beta-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY.2020.63.11.Zhang, YaChao; Li, YiFan; Wang, ZhiZhe; Guo, Rui; Xu, ShengRui; Liu, ChuanYang; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue
85.Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks.SCIENCE CHINA-INFORMATION SCIENCES.2020.63.6.Guo, Xingxing; Xiang, Shuiying; Zhang, Yahui; Wen, Aijun; Hao, Yue
86.A novel gate engineered L-shaped dopingless tunnel field-effect transistor.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING.2020.126.6.Li, Cong; Guo, Jiamin; Jiang, Haofeng; You, Hailong; Liu, Weifeng; Zhuang, Yiqi
87.Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection.SCIENCE CHINA-INFORMATION SCIENCES.2020.63.6.Xiang, Shuiying; Han, Yanan; Guo, Xingxing; Wen, Aijun; Han, Genquan; Hao, Yue
88.Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire.NANOSCALE RESEARCH LETTERS.2020.15.1.Hu, Haodong; Liu, Yuchen; Han, Genquan; Fang, Cizhe; Zhang, Yanfang; Liu, Huan; Wang, Yibo; Liu, Yan; Ye, Jiandong; Hao, Yue
89.Novel gate-controlled bipolar composite field effect transistor with large on-state current.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.5.Duan, Baoxing; Sun, Licheng; Dong, Ziming; Yang, Yintang
90.Transparent Ultrathin Metal Electrode with Microcavity Configuration for Highly Efficient TCO-Free Perovskite Solar Cells.MATERIALS.2020.13.10.He, Fengqin; You, Hailong; Li, Xueyi; Chen, Dazheng; Pang, Shangzheng; Zhu, Weidong; Xi, He; Zhang, Jincheng; Zhang, Chunfu
91.Filtering Characteristics of Phonon Polaritons Waves Based on Dielectric-h-BN-Dielectric Structure in Mid-Infrared Band.NANOMATERIALS.2020.10.5.Cai, Ming; Wang, Shulong; Liu, Zhihong; Wang, Yindi; Han, Tao; Liu, Hongxia
92.High performance InAlN/GaN high electron mobility transistors for low voltage applications.CHINESE PHYSICS B.2020.29.5.Mi, Minhan; Zhang, Meng; Wu, Sheng; Yang, Ling; Hou, Bin; Zhou, Yuwei; Guo, Lixin; Ma, Xiaohua; Hao, Yue
93.Graphene Electro-Optical Switch Modulator by Adjusting Propagation Length Based on Hybrid Plasmonic Waveguide in Infrared Band.SENSORS.2020.20.10.Cai, Ming; Wang, Shulong; Liu, Zhihong; Wang, Yindi; Han, Tao; Liu, Hongxia
94.An Ultra-Low Power Consumption High-Linearity Switching Scheme for SAR ADC.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2020.29.6.Chen, Yushi; Zhuang, Yiqi; Tang, Hualian
95.Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source.CHINESE PHYSICS B.2020.29.5.Lyu, Zhijun; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen; Lu, Bin; Zhu, Yi; Meng, Fankang; Sun, Jiale
96.A systematic study of device structure on DC and small-signal characteristics of millimeter-wave AlGaN/GaN HEMT.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS.2020.33.3.Mi, Minhan; Ma, Xiaohua; Yang, Ling; Zhang, Meng; Wu, Sheng; Hao, Yue
97.Influence of fin width and gate structure on the performance of AlGaN/GaN fin-shaped HEMTs.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS.2020.33.3.Zhang, Meng; Ma, Xiaohua; Mi, Minhan; Yang, Ling; Wu, Sheng; Hou, Bin; Zhu, Qing; Zhang, Hengshuang; Wu, Mei; Hao, Yue
98.Improving electron extraction ability and suppressing recombination of planar perovskite solar cells with the triple cascade electron transporting layer.SOLAR ENERGY MATERIALS AND SOLAR CELLS.2020.208.Su, Aixue; Zhang, Chunfu; Chen, Dazheng; Dong, Hang; Pang, Shangzheng; Zhu, Weidong; Xi, He; Lu, Gang; Zhang, Jincheng; Hao, Yue
99.Self-powered photodetectors based on beta-Ga2O3/4H-SiC heterojunction with ultrahigh current on/off ratio and fast response.JOURNAL OF ALLOYS AND COMPOUNDS.2020.821.Yu, Jiangang; Dong, Linpeng; Peng, Bo; Yuan, Lei; Huang, Yu; Zhang, Lichun; Zhang, Yuming; Jia, Renxu
100.Enhanced efficiency and stability of planar perovskite solar cells by introducing amino acid to SnO2/perovskite interface.JOURNAL OF POWER SOURCES.2020.455.Du, Jianhui; Feng, Liping; Guo, Xing; Huang, Xiangping; Lin, Zhenhua; Su, Jie; Hu, Zhaosheng; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
101.beta-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY.2020.63.7.Wang, YiBo; Xu, WenHui; You, TianGui; Mu, FengWen; Hu, HaoDong; Liu, Yan; Huang, Hao; Suga, Tadatomo; Han, GenQuan; Ou, Xin; Hao, Yue
102.Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V.NANO-MICRO LETTERS.2020.12.1.Zhu, Weidong; Zhang, Zeyang; Chen, Dandan; Chai, Wenming; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
103.Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices.ACTA PHYSICA SINICA.2020.69.7.Dong Shi-Jian; Guo Hong-Xia; Ma Wu-Ying; Lv Ling; Pan Xiao-Yu; Lei Zhi-Feng; Yue Shao-Zhong; Hao Rui-Jing; Ju An-An; Zhong Xiang-Li; Ouyang Xiao-Ping
104.The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction.MOLECULES.2020.25.8.Han, Tao; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Kun
105.Studies of band structures and electrical properties of uniaxially strained phosphorene by a simplified two-band k.p method.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.4.Wu, Shujing; Di, Linjia; Liu, Fang; Dai, Xianying; Hao, Yue
106.The Performance Improvement of Using Hole Transport Layer with Lithium and Cobalt for Inverted Planar Perovskite Solar Cell.COATINGS.2020.10.4.Wang, Shaoxi; Guan, He; Yin, Yue; Zhang, Chunfu
107.Penta-C-20: A Superhard Direct Band Gap Carbon Allotrope Composed of Carbon Pentagon.MATERIALS.2020.13.8.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
108.In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT.CHINESE PHYSICS B.2020.29.4.Mi, Min-Han; Wu, Sheng; Yang, Ling; He, Yun-Long; Hou, Bin; Zhang, Meng; Guo, Li-Xin; Ma, Xiao-Hua; Hao, Yue
109.Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs.CHINESE PHYSICS B.2020.29.4.Zhu, Qing; Ma, Xiao-Hua; Chen, Yi-Lin; Hou, Bin; Zhu, Jie-Jie; Zhang, Meng; Wu, Mei; Yang, Ling; Hao, Yue
110.A 26.1-38.2 GHz injection-locked frequency divider with current phasor synthesis technique.AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS.2020.117.Li, Zhen; Zhuang, Yiqi; Li, Zhenrong; Quan, Xing; Wang, Zeyuan
111.High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application.JOURNAL OF PHYSICS D-APPLIED PHYSICS.2020.53.14.Hou, Bin; Yang, Ling; Mi, Minhan; Zhang, Meng; Yi, Chupeng; Wu, Mei; Zhu, Qing; Lu, Yang; Zhu, Jiejie; Zhou, Xiaowei; Lv, Ling; Ma, Xiaohua; Hao, Yue
112.The impact of laser energy, bias and irradiation positions on single event transients of InP HBT.JOURNAL OF PHYSICS D-APPLIED PHYSICS.2020.53.14.Zhao, Xiao-Hong; Lu, Hong-Liang; Zhang, Yu-Ming; Zhang, Yi-Men; Wei, Zhi-Chao
113.A breakdown model of LDMOS optimizing lateral and vertical electric field to improve breakdown voltage by multi-ring technology.SOLID-STATE ELECTRONICS.2020.166.Dong, Ziming; Duan, Baoxing; Li, Mingzhe; Wang, YanDong; Yang, Yintang
114.A low-temperature supercritical nitridation technology for enhancing the performance of AlGaN/GaN HEMTs.JOURNAL OF SUPERCRITICAL FLUIDS.2020.158.Zhang, Hong; Chen, Guanjun; Zhang, Jincheng; Zheng, Xuefeng; Zhou, Hong; Zhao, Shenglei; Hao, Yue
115.Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH.2020.535.Zhang, HePeng; Xue, JunShuai; Fu, YongRui; Yang, Mei; Zhang, YaChao; Duan, XiaoLing; Qiang, WeiTing; Li, LanXing; Sun, ZhiPeng; Ma, XiaoHua; Zhang, JinCheng; Hao, Yue
116.Boosting performance of perovskite solar cells with Graphene quantum dots decorated SnO2 electron transport layers.APPLIED SURFACE SCIENCE.2020.507.Pang, Shangzheng; Zhang, Chunfu; Zhang, Hairong; Dong, Hang; Chen, Dazheng; Zhu, Weidong; Xi, He; Chang, Jingjing; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue
117.Physical Properties of XN (X = B, Al, Ga, In) in the Pm-3n phase: First-Principles Calculations.MATERIALS.2020.13.6.Zhang, Qidong; Zou, Yucong; Fan, Qingyang; Yang, Yintang
118.High performance hydrogen/oxygen terminated CVD single crystal diamond radiation detector.APPLIED PHYSICS LETTERS.2020.116.9.Su, Kai; Pen, Zeyang; Zhang, Jinfeng; Liu, Linyue; Zhang, Jincheng; Zhang, Yachao; He, Qi; Zhang, Chunfu; Ouyang, Xiaoping; Hao, Yue
119.Electrical Phase Control Based on Graphene Surface Plasmon Polaritons in Mid-infrared.NANOMATERIALS.2020.10.3.Wang, Yindi; Liu, Hongxia; Wang, Shulong; Cai, Ming; Zhang, Haifeng; Qiao, Yanbin
120.TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance.COATINGS.2020.10.3.Han, Tao; Liu, Hongxia; Chen, Shupeng; Wang, Shulong; Xie, Haiwu
121.The Effect of Ion Irradiation Density on the Defect of Graphene: A Molecular Dynamics Study.CRYSTALS.2020.10.3.Lin, Jinfu; Wang, Shulong; Liu, Hongxia; Yin, Kai; Wu, Lei; Li, Wei
122.Design and fabrication of high performance 4H-SiC TJBS diodes.JOURNAL OF CRYSTAL GROWTH.2020.533.Dou, Wentao; Song, Qingwen; Yuan, Hao; Tang, Xiaoyan; Zhang, Yuming; Zhang, Yimen; Xiao, Li; Wang, Liangyong
123.Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application.SUPERLATTICES AND MICROSTRUCTURES.2020.139.Zhang, Xiao-Yu; Yang, Lin-An; Ma, Yao; Liu, Yu-Chen; Yang, Wen-Lu; Ma, Xiao-Hua; Hao, Yue
124.Tailored interfacial crystal facets for efficient CH3NH3PbI3 perovskite solar cells.ORGANIC ELECTRONICS.2020.78.Zhu, Weidong; Wang, Qian; Chai, Weming; Chen, Dandan; Chen, Dazheng; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
125.Multi-layer polymer-metal structures for acoustic impedance matching in high-frequency broadband ultrasonic transducers design.APPLIED ACOUSTICS.2020.160.Yang, Xinyu; Fei, Chunlong; Li, Di; Sun, Xinhao; Hou, Shang; Chen, Jun; Yang, Yintang
126.Niobium doped TiO2 nanorod arrays as efficient electron transport materials in photovoltaic.JOURNAL OF POWER SOURCES.2020.450.Zhong, Peng; Chen, Xinpeng; Niu, Bingqiang; Li, Cong; Wang, Yucheng; Xi, He; Lei, Yimin; Wang, Zhenni; Ma, Xiaohua
127.2H/1T ' phase WS2(1-x)Te2x, alloys grown by chemical vapor deposition with tunable band structures.APPLIED SURFACE SCIENCE.2020.504.Wang, Zhan; Sun, Jing; Wang, Haolin; Lei, Yimin; Xie, Yong; Wang, Guanfei; Zhao, Ying; Li, Xiaobo; Xu, Hua; Yang, Xiubo; Feng, Liping; Ma, Xiaohua
128.Forward Current Conduction Mechanism of Mechanically Exfoliated beta-Ga2O3/GaN pn Heterojunction Diode.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.2020.9.3.Feng, Qian; Yan, Guangshuo; Hu, Zhuangzhuang; Feng, Zhaoqing; Tian, Xusheng; Jiao, Dian; Mu, Wenxiang; Jia, Zhitai; Lian, Xiaozheng; Lai, Zhanping; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng; Hao, Yue
129.Deep-Ultraviolet Photoactivation-Assisted Contact Engineering Toward High-Efficiency and Stable All-Inorganic CsPbI2Br Perovskite Solar Cells.SOLAR RRL.2020.4.6.Zhou, Long; Su, Jie; Lin, Zhenhua; Guo, Xing; Ma, Jing; Feng, Liping; Zhang, Jincheng; Wang, Shen; Liu, Shengzhong (Frank); Chang, Jingjing; Hao, Yue
130.Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4.BIOSENSORS & BIOELECTRONICS.2020.150.Li, Yang; Bu, Yuyu; Jiang, Fengqiu; Dai, Xianying; Ao, Jin-Ping
131.Effect of iodine doping on photoelectric properties of perovskite-based MOS devices.MATERIALS LETTERS.2020.261.Liu, Jinghuang; Pang, Tiqiang; Wang, Yucheng; Du, Yongqi; Zhang, Yuming; Jia, Renxu
132.Comparative Study of Characteristics and Interface States with and without Post-Gate-Annealing Treatment for AlGaN/GaN-Recessed Metal-Insulator-Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2020.217.6.Zhao, Yaopeng; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; He, Yunlong; Liu, Kai; Li, Ang; Peng, Yue; Zhang, Chunfu; Hao, Yue
133.First-Principles Study on Structural, Mechanical, Anisotropic, Electronic and Thermal Properties of III-Phosphides: XP (X = Al, Ga, or In) in the P6(4)22 Phase.MATERIALS.2020.13.3.Miao, Junjie; Chai, Changchun; Zhang, Wei; Song, Yanxing; Yang, Yintang
134.First-Principles Calculations of the Electronic Structure and Optical Properties of Yttrium-Doped ZnO Monolayer with Vacancy.MATERIALS.2020.13.3.Wu, Qian; Wang, Ping; Liu, Yan; Yang, Han; Cheng, Jingsi; Guo, Lixin; Yang, Yintang; Zhang, Zhiyong
135.Investigation of Enhanced Transmission and Beaming Effect Through an InSb Subwavelength Grating With a Slit at the Terahertz Range.IEEE PHOTONICS JOURNAL.2020.12.1.Liu, Xinyi; Liu, Yan; Fang, Cizhe; Han, Genquan; Hao, Yue
136.High Performance Planar Structure Perovskite Solar Cells Using a Solvent Dripping Treatment on Hole Transporting Layer.COATINGS.2020.10.2.Wang, Xuhui; Lu, Gang; Zhang, Min; Gao, Yali; Liu, Yanbo; Zhou, Long; Lin, Zhenhua
137.Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs.CHINESE PHYSICS LETTERS.2020.37.2.Bao, SiQin-GaoWa; Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Yang, Ling; Chen, Li-Xiang; Zhu, Qing; Hao, Yue
138.Fabrication of eco-friendly carbon microtubes @ nitrogen-doped reduced graphene oxide hybrid as an excellent carbonaceous scaffold to load MnO2 nanowall (PANI nanorod) as bifunctional material for high-performance supercapacitor and oxygen reduction reaction catalyst.JOURNAL OF POWER SOURCES.2020.447.Xiong, Chuanyin; Yang, Qi; Dang, Weihua; Li, Mengrui; Li, Bingbing; Su, Jie; Liu, Yue; Zhao, Wei; Duan, Chao; Dai, Lei; Xu, Yongjian; Ni, Yonghao
139.Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes.JOURNAL OF PHYSICS D-APPLIED PHYSICS.2020.53.4.Bian, Zhaoke; Su, Kai; Zhang, Jincheng; Zhao, Shenglei; Zhou, Hong; Zhang, Weihang; Zhang, Yachao; Zhang, Tao; Chen, Jiabo; Dang, Kui; Ning, Jing; Hao, Yue
140.Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations.ACTA PHYSICA SINICA.2020.69.2.Zhang Jin-Feng; Xu Jia-Min; Ren Ze-Yang; He Qi; Xu Sheng-Rui; Zhang Chun-Fu; Zhang Jin-Cheng; Hao Yue
141.Modulation of the photocatalytic performance of g-C3N4 by two-sites co-doping using variable valence metal.APPLIED SURFACE SCIENCE.2020.500.Dai, Yanhui; Gu, Yingjie; Bu, Yuyu
142.Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode.JOURNAL OF PHYSICS D-APPLIED PHYSICS.2020.53.2.Huang, Wei-Chen; Huang, Shin-Ping; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yuh-Suan; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.
143.The Investigation of beta-Ga2O3 Schottky Diode with Floating Field Ring Termination and the Interface States.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.2020.9.2.Hu, Zhuangzhuang; Zhao, Chunyong; Feng, Qian; Feng, Zhaoqing; Jia, Zhitai; Lian, Xiaozheng; Lai, Zhanping; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng; Hao, Yue
144.Structural, electrical and optical properties of halogen doped phosphorene based on density functional theory.JOURNAL OF ALLOYS AND COMPOUNDS.2020.812.Pu, Kaiwen; Dai, Xianying; Jia, Difan; Tao, Wenluo; Liu, Fang; Zhang, Xiaodong; Song, Jianjun; Zhao, Tianlong; Hao, Yue
145.Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes.MATERIALS.2020.13.2.Wang, Yanli; Li, Peixian; Zhang, Xinyu; Xu, Shengrui; Zhou, Xiaowei; Wu, Jinxing; Yue, Wenkai; Hao, Yue
146.Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height.CHINESE PHYSICS B.2020.29.2.Wang, Zhong-Xu; Du, Lin; Liu, Jun-Wei; Wang, Ying; Jiang, Yun; Ji, Si-Wei; Dong, Shi-Wei; Chen, Wei-Wei; Tan, Xiao-Hong; Li, Jin-Long; Li, Xiao-Jun; Zhao, Sheng-Lei; Zhang, Jin-Cheng; Hao, Yue
147.Improved DRUS 4H-SiC MESFET with High Power Added Efficiency.MICROMACHINES.2020.11.1.Jia, Hujun; Liang, Yuan; Li, Tao; Tong, Yibo; Zhu, Shunwei; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang
148.Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode.MICROMACHINES.2020.11.1.Wang, Ying; Li, Liu-An; Ao, Jin-Ping; Hao, Yue
149.Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate.APPLIED SCIENCES-BASEL.2020.10.1.Xie, Haiwu; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Han, Tao; Li, Wei
150.Enhancing Perovskite Solar Cell Performance through Surface Engineering of Metal Oxide Electron-Transporting Layer.COATINGS.2020.10.1.Lu, Gang; Wang, Xuhui; Du, Juan; Zhang, Min; Gao, Yali; Liu, Yanbo; Ma, Jing; Lin, Zhenhua
151.A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2020.35.1.Zheng, Xuefeng; Tang, Zhenling; Lv, Ling; Bai, Dandan; Wang, Chong; Mao, Wei; Cao, Yanrong; Ma, Xiaohua; Hao, Yue
152.A 7b 400 MS/s pipelined SAR ADC in 65 nm CMOS.MICROELECTRONICS JOURNAL.2020.95.Ding, Ruixue; Dang, Li; Lin, Hanchao; Sun, Depeng; Liu, Shubin; Zhu, Zhangming
153.Improve the oxide/perovskite heterojunction contact for low temperature high efficiency and stable all-inorganic CsPbI2Br perovskite solar cells.NANO ENERGY.2020.67.Ma, Jing; Su, Jie; Lin, Zhenhua; Zhou, Long; He, Jian; Zhang, Jincheng; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
154.Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator.SOLID-STATE ELECTRONICS.2020.163.Zhao, Yaopeng; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; He, Yunlong; Liu, Kai; Li, Ang; Peng, Yue; Zhang, Chunfu; Hao, Yue
155.A novel 4H-SiC MESFET with symmetrical lightly doped drain for high voltage and high power applications.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2020.105.Jia, Hujun; Li, Tao; Tong, Yibo; Zhu, Shunwei; Liang, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang Yintang
156.Polarization Multiplexing Reservoir Computing Based on a VCSEL With Polarized Optical Feedback.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS.2020.26.1.Guo, Xing Xing; Xiang, Shui Ying; Zhang, Ya Hui; Lin, Lin; Wen, Ai Jun; Hao, Yue
157.Uncertainty analysis of sensitivity of MEMS microphone based on artificial neural network.IEICE ELECTRONICS EXPRESS.2019.16.24.Liu, Lei; Jia, Renxu
158.Mechanical and thermodynamic properties of two-dimensional monoclinic Ga2O3.MATERIALS & DESIGN.2019.184.Su, Jie; Zhang, Junjing; Guo, Rui; Lin, Zhenhua; Liu, Mengyu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
159.Strong optical response and light emission from a monolayer molecular crystal.NATURE COMMUNICATIONS.2019.10.Zhao, Huijuan; Zhao, Yingbo; Song, Yinxuan; Zhou, Ming; Lv, Wei; Tao, Liu; Feng, Yuzhang; Song, Biying; Ma, Yue; Zhang, Junqing; Xiao, Jun; Wang, Ying; Lien, Der-Hsien; Amani, Matin; Kim, Hyungjin; Chen, Xiaoqing; Wu, Zhangting; Ni, Zhenhua; Wang, Peng; Shi, Yi; Ma, Haibo; Zhang, Xiang; Xu, Jian-Bin; Troisi, Alessandro; Javey, Ali; Wang, Xinran
160.Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers.MATERIALS.2019.12.24.Liu, Chuan-Yang; Zhang, Ya-Chao; Xu, Sheng-Rui; Jiang, Li; Zhang, Jin-Cheng; Hao, Yue
161.Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001).COATINGS.2019.9.12.Yang, Shizheng; Lv, Hongliang; Ai, Likun; Tian, Fangkun; Yan, Silu; Zhang, Yuming
162.Mismatch errors randomization for multi-bit DAC in sigma-delta modulators based on butterfly-type network.MICROELECTRONICS JOURNAL.2019.94.Li, Di; Fei, Chunlong; Zhang, Qidong; Li, Yani; Yang, Yin-Tang
163.Flexible Solar-Blind Ga2O3 Ultraviolet Photodetectors With High Responsivity and Photo-to-Dark Current Ratio.IEEE PHOTONICS JOURNAL.2019.11.6.Li, Zhe; Xu, Yu; Zhang, Jiaqi; Cheng, Yaolin; Chen, Dazheng; Feng, Qian; Xu, Shengrui; Zhang, Yachao; Zhang, Jincheng; Hao, Yue; Zhang, Chunfu
164.A Modulated Double-Passivation Strategy Toward Highly Efficient Perovskite Solar Cells with Efficiency Over 21%.SOLAR RRL.2019.3.12.Dong, Hang; Yue, Man; Pang, Shangzheng; Zhu, Weidong; Chen, Dazheng; Xi, He; Lin, Zhenhua; Chang, Jingjing; Zhang, Jincheng; Hao, Yue; Zhang, Chunfu
165.Characterization and Mobility Analysis of Normally off Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2020.217.1.Zhang, Jin-Feng; Chen, Wan-Jiao; Ren, Ze-Yang; Su, Kai; Yang, Peng-Zhi; Hu, Zhuang-Zhuang; Zhang, Jin-Cheng; Hao, Yue
166.Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas.APPLIED PHYSICS LETTERS.2019.115.19.Chen, Lixiang; Wang, He; Hou, Bin; Liu, Ming; Shen, Lvkang; Lu, Xiaoli; Ma, Xiaohua; Hao, Yue
167.Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured alpha-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method.MATERIALS.2019.12.22.Xu, Yu; Zhang, Chunfu; Cheng, Yaolin; Li, Zhe; Cheng, Ya'nan; Feng, Qian; Chen, Dazheng; Zhang, Jincheng; Hao, Yue
168.Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface.CHINESE PHYSICS B.2019.28.12.Ren, Ze-Yang; Liu, Jun; Su, Kai; Zhang, Jin-Feng; Zhang, Jin-Cheng; Xu, Sheng-Rui; Hao, Yue
169.High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2019.34.11.Chen, Jiabo; Bian, Zhaoke; Liu, Zhihong; Ning, Jing; Duan, Xiaoling; Zhao, Shenglei; Wang, Haiyong; Tang, Qing; Wu, Yinhe; Song, Yuqin; Zhang, Jincheng; Hao, Yue
170.Analysis of dynamic high-frequency acoustic field control by metasurfaces lens.AIP ADVANCES.2019.9.11.Yang, Xinyu; Fei, Chunlong; Li, Di; Li, Zhaoxi; Sun, Xinhao; Hou, Shang; Feng, Wei; Yang, Yintang
171.Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs.ELECTRONICS.2019.8.11.Lin, Jinfu; Liu, Hongxia; Wang, Shulong; Liu, Chang; Li, Mengyu; Wu, Lei
172.A Facile Way to Improve the Performance of Perovskite Solar Cells by Toluene and Diethyl Ether Mixed Anti-Solvent Engineering.COATINGS.2019.9.11.Yang, Haifeng; Wang, Hui; Zhang, Jincheng; Chang, Jingjing; Zhang, Chunfu
173.Improving the transconductance flatness of InAlN/GaN HEMT by modulating V-T along the gate width.APPLIED PHYSICS EXPRESS.2019.12.11.Mi, Minhan; Wu, Sheng; Zhang, Meng; Yang, Ling; Hou, Bin; Zhao, Ziyue; Guo, Lixin; Zheng, Xuefeng; Ma, Xiaohua; Hao, Yue
174.Design of high linearity InGaAs/InP avalanche photodiode with a hybrid absorption layer structure.INFRARED PHYSICS & TECHNOLOGY.2019.102.Xing, Hailong; Zhang, Junqin; Liu, Aofei; Yang, Yintang
175.A Low Power and Low Current-Mismatch Charge Pump with Dynamic Current Compensation.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2019.28.12.Liu, Lianxi; Gao, Shaopu; Mu, Junchao; Zhu, Zhangming
176.Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx-Based Resistive Random Access Memory.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2019.216.22.Guo, Jingshu; Gao, Haixia; Jiang, Pengfei; Yang, Mei; Jiang, Xinzi; Zhang, Zhenfei; Ma, Xiaohua; Yang, Yintang
177.STDP-Based Unsupervised Spike Pattern Learning in a Photonic Spiking Neural Network With VCSELs and VCSOAs.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS.2019.25.6.Xiang, Shuiying; Zhang, Yahui; Gong, Junkai; Guo, Xingxing; Lin, Lin; Hao, Yue
178.High-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration.SCIENTIFIC REPORTS.2019.9.Zhang, Jiaqi; Wu, Yichang; Li, Zhe; Zhang, Yachao; Peng, Yue; Chen, Dazheng; Zhu, Weidong; Xu, Shengrui; Zhang, Chunfu; Hao, Yue
179.Layout optimization methodology for ring-based on-chip optical network.IEICE ELECTRONICS EXPRESS.2019.16.20.Wang, Kang; Wang, Kun; Yang, Yintang; Wang, Yue; Gu, Huaxi
180.Polyelectrolyte-Doped SnO2 as a Tunable Electron Transport Layer for High-Efficiency and Stable Perovskite Solar Cells.SOLAR RRL.2020.4.1.Huang, Xiangping; Du, Jianhui; Guo, Xing; Lin, Zhenhua; Ma, Jing; Su, Jie; Feng, Liping; Zhang, Chunfu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
181.Theoretical Modeling of Triple-Barrier Resonant-Tunneling Diodes Based on AlGaN/GaN Heterostructures.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2019.216.23.Rong, Taotao; Yang, Lin-An; Zhao, Ziyue; Zhang, Kai; Hao, Yue
182.Red phosphorus decorated and doped TiO2 nanofibers for efficient photocatalytic hydrogen evolution from pure water.APPLIED CATALYSIS B-ENVIRONMENTAL.2019.255.Zhu, Yukun; Li, Junzhi; Dong, Chung-Li; Ren, Jun; Huang, Yu-Cheng; Zhao, Daming; Cai, Rongsheng; Wei, Daixing; Yang, Xianfeng; Lv, Chunxiao; Theis, Wolfgang; Bu, Yuyu; Han, Wei; Shen, Shaohua; Yang, Dongjiang
183.Two novel superhard carbon allotropes with honeycomb structures.JOURNAL OF APPLIED PHYSICS.2019.126.14.Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
184.Optimizing the Performance of CsPbI3-Based Perovskite Solar Cells via Doping a ZnO Electron Transport Layer Coupled with Interface Engineering.NANO-MICRO LETTERS.2019.11.1.Yue, Man; Su, Jie; Zhao, Peng; Lin, Zhenhua; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
185.Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure.CHINESE PHYSICS B.2019.28.11.Yuan, Hao; Song, Qing-Wen; Han, Chao; Tang, Xiao-Yan; He, Xiao-Ning; Zhang, Yu-Ming; Zhang, Yi-Men
186.Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate.CHINESE PHYSICS B.2019.28.11.Zhang, Jing; Lv, Hong-Liang; Ni, Hai-Qiao; Yang, Shi-Zheng; Cui, Xiao-Ran; Niu, Zhi-Chuan; Zhang, Yi-Men; Zhang, Yu-Ming
187.Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source.APPLIED SCIENCES-BASEL.2019.9.19.Xie, Haiwu; Liu, Hongxia; Chen, Shupeng; Han, Tao; Wang, Shulong
188.A High Gain, 808 MHz GBW Four-Stage OTA in 65 nm CMOS.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2019.28.11.Li, Zhe; Ma, Rui; Liu, Maliang; Ding, Ruixue; Zhu, Zhangming
189.A 15ps resolution time-to-digital converter with on-chip PLL counting for LiDAR multi-object sensors.MICROELECTRONICS JOURNAL.2019.92.Duan, Jiangkun; Liu, Maliang; Zhu, Zhangming; Yang, Yintang
190.Comparative study of AlGaN/GaN heterostructures grown on different sapphire substrates.SUPERLATTICES AND MICROSTRUCTURES.2019.134.Li, Wen; Xu, Shengrui; Zhang, Yachao; Peng, Ruoshi; Zhao, Ying; Du, Jinjuan; Fan, Xiaomeng; Zhang, Jincheng; Tao, Hongchang; Wang, Xuewei; Hao, Yue
191.A low-profile wideband dual-polarization patch antenna with antisymmetric feeding network.INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING.2019.29.10.Yang, Yintang; Zhang, Jianqiang; Lan, Haokun; Liu, Maliang
192.The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region.SOLID-STATE ELECTRONICS.2019.160.Yuan, Hao; Tang, Xiaoyan; Song, Qingwen; He, Yanjing; He, Xiaoning; Zhang, Yimen; Zhang, Yuming
193.Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch.MICROELECTRONIC ENGINEERING.2019.217.Chen, Hui; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimeng; Bai, Zhiqiang; Zhang, Yuming
194.Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD.NANOMATERIALS.2019.9.9.Han, Tao; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Xie, Haiwu; Yang, Kun
195.A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction.NANOMATERIALS.2019.9.9.Yang, Kun; Liu, Hongxia; Wang, Shulong; Li, Wei; Han, Tao
196.An Improved 4H-SiC MESFET with a Partially Low Doped Channel.MICROMACHINES.2019.10.9.Jia, Hujun; Tong, Yibo; Li, Tao; Zhu, Shunwei; Liang, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang
197.Understanding the Potential of 2D Ga2O3 in Flexible Optoelectronic Devices: Impact of Uniaxial Strain and Electric Field.ADVANCED THEORY AND SIMULATIONS.2019.2.9.Guo, Rui; Su, Jie; Lin, Zhenhua; Zhang, Junjing; Qin, Yu; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
198.The investigation of temperature dependent electrical characteristics of Au/Ni/beta-(InGa)(2)O-3 Schottky diode.SUPERLATTICES AND MICROSTRUCTURES.2019.133.Shen, Yixian; Feng, Qian; Zhang, Ke; Hu, Zhuangzhuang; Yan, Guangshuo; Cai, Yuncong; Mu, Wenxiang; Jia, Zhitai; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng; Lian, Xiaozheng; Lai, Zhanping; Hao, Yue
199.A 800 V beta-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistor with High-Power Figure of Merit of Over 86.3 MW cm(-2).PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2019.216.20.Feng, Zhaoqing; Cai, Yuncong; Yan, Guangshuo; Hu, Zhuangzhuang; Dang, Kui; Zhang, Yanni; Lu, Zhijun; Cheng, Hongjuan; Lian, Xiaozheng; Xu, Yongkuan; Zhang, Chunfu; Feng, Qian; Zhou, Hong; Zhang, Jincheng; Hao, Yue
200.Kinetic Monte Carlo Simulation of the Growth of AlN Films by Metal Organic Chemical Vapor Deposition.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.2019.256.12.An, Jiadai; Dai, Xianying; Wu, Wujian; Guo, Runqiu; Feng, Lansheng
201.Study of electronic transport properties in AlGaN/AlN/GaN/AlGaN double-heterojunction transistor.JOURNAL OF APPLIED PHYSICS.2019.126.7.Li, Yao; Zhang, Jinfeng
202.Highly Efficient and Stable Planar Perovskite Solar Cells with Modulated Diffusion Passivation Toward High Power Conversion Efficiency and Ultrahigh Fill Factor.SOLAR RRL.2019.3.11.Zhou, Long; Lin, Zhenhua; Ning, Zhijun; Li, Tao; Guo, Xing; Ma, Jing; Su, Jie; Zhang, Chunfu; Zhang, Jincheng; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
203.Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si.APPLIED PHYSICS LETTERS.2019.115.8.Wu, Mei; Ma, Xiao-Hua; Yang, Ling; Zhang, Meng; Zhu, Qing; Zhang, Xin-Chuang; Hou, Bin; Zheng, Xue-Feng; Hao, Yue
204.High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study.NANOSCALE RESEARCH LETTERS.2019.14.1.Zhu, Jiaduo; Ning, Jing; Wang, Dong; Zhang, Jincheng; Guo, Lixin; Hao, Yue
205.Theoretical Analysis of Two-Terminal and Four-Terminal Perovskite/Copper Indium Gallium Selenide Tandem Solar Cells.SOLAR RRL.2019.3.11.Zhao, Peng; Feng, Liping; Lin, Zhenhua; Wang, Jiaping; Su, Jie; Hu, Zhaosheng; Zhang, Jincheng; Ouyang, Xiaoping; Chang, Jingjing; Hao, Yue
206.High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier.APPLIED PHYSICS LETTERS.2019.115.7.Zhang, Yachao; Guo, Rui; Xu, Shengrui; Zhang, Jincheng; Zhao, Shenglei; Wang, Haiyong; Hu, Qiang; Zhang, Chunfu; Hao, Yue
207.Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions.MATERIALS.2019.12.16.Lu, Qin; Yu, Li; Liu, Yan; Zhang, Jincheng; Han, Genquan; Hao, Yue
208.Improvement of BiVO4 Photoanode Performance During Water Photo-Oxidation Using Rh-Doped SrTiO3 Perovskite as a Co-Catalyst.ADVANCED FUNCTIONAL MATERIALS.2019.29.32.Zhang, Yaping; Li, Yang; Ni, Diqing; Chen, Zhiwei; Wang, Xiao; Bu, Yuyu; Ao, Jin-Ping
209.A Self-Powered P-SSHI Interface Circuit with Adaptive On-Resistance Active Diode for PEH.JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS.2019.28.9.Liu, Lianxi; Cheng, Jiangwei; Mu, Junchao; Huang, Chaojin; Zhu, Zhangming
210.The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures.NANOMATERIALS.2019.9.8.Zhao, Xiaohong; Lu, Hongliang; Zhao, Manli; Zhang, Yuming; Zhang, Yimen
211.Analytical model of buried air partial SOI LDMOS.SUPERLATTICES AND MICROSTRUCTURES.2019.132.Xing, Jingyu; Duan, Baoxing; Dong, Ziming; Wang, Xiameng; Yang, Yintang
212.Temperature-Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2019.216.16.He, Yunlong; Huang, Zeyang; Zhang, Meng; Wu, Mei; Mi, Minhan; Wang, Chong; Yang, Ling; Zhang, Chunfu; Guo, Lixin; Ma, Xiaohua; Hao, Yue
213.Comparative Study Between Partially and Fully Recessed-Gate Enhancement-Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2019.216.16.He, Yunlong; Gao, Hao; Wang, Chong; Zhao, Yaopeng; Lu, Xiaoli; Zhang, Chunfu; Zheng, Xuefeng; Guo, Lixin; Ma, Xiaohua; Hao, Yue
214.Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.2019.13.8.Zhang, Yachao; Su, Kai; Guo, Rui; Xu, Shengrui; Chen, Dazheng; Zhu, Jiaduo; Bao, Weimin; Zhang, Jincheng; Ning, Jing; Hao, Yue
215.Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage.APPLIED PHYSICS EXPRESS.2019.12.8.Bian, Zhaoke; Zhang, Tao; Zhang, Jincheng; Zhao, Shenglei; Zhou, Hong; Xue, Junshuai; Duan, Xiaoling; Zhang, Yachao; Chen, Jiabo; Dang, Kui; Ning, Jing; Hao, Yue
216.Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.NANOSCALE RESEARCH LETTERS.2019.14.Xiao, Wenwu; Liu, Chen; Peng, Yue; Zheng, Shuaizhi; Feng, Qian; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue; Liao, Min; Zhou, Yichun
217.Impacts of Cu-Doping on the Performance of La-Based RRAM Devices.NANOSCALE RESEARCH LETTERS.2019.14.Wang, Yongte; Liu, Hongxia; Wang, Xing; Zhao, Lu
218.Beneficial Role of Organolead Halide Perovskite CH3NH3PbI3/SnO2 Interface: Theoretical and Experimental Study.ADVANCED MATERIALS INTERFACES.2019.6.17.Zhang, Siyu; Su, Jie; Lin, Zhenhua; Tian, Ke; Guo, Xing; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
219.Optical Transport Properties of Graphene Surface Plasmon Polaritons in Mid-Infrared Band.CRYSTALS.2019.9.7.Wang, Yindi; Liu, Hongxia; Wang, Shulong; Cai, Ming; Ma, Lan
220.Efficient Ni/Au Mesh Transparent Electrodes for ITO-Free Planar Perovskite Solar Cells.NANOMATERIALS.2019.9.7.Chen, Dazheng; Fan, Gang; Zhang, Hongxiao; Zhou, Long; Zhu, Weidong; Xi, He; Dong, Hang; Pang, Shangzheng; He, Xiaoning; Lin, Zhenhua; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
221.Improved MRD 4H-SiC MESFET with High Power Added Efficiency.MICROMACHINES.2019.10.7.Zhu, Shunwei; Jia, Hujun; Wang, Xingyu; Liang, Yuan; Tong, Yibo; Li, Tao; Yang, Yintang
222.Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.MICROMACHINES.2019.10.7.Zhu, Shunwei; Jia, Hujun; Li, Tao; Tong, Yibo; Liang, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang
223.Physical properties of Si-Ge alloys in C2/m phase: a comprehensive investigation.JOURNAL OF PHYSICS-CONDENSED MATTER.2019.31.25.Song, Yanxing; Chai, Changchun; Fan, Qingyang; Zhang, Wei; Yang, Yintang
224.A novel sense amplifier to mitigate the impact of NBTI and PVT variations for STT-MRAM.IEICE ELECTRONICS EXPRESS.2019.16.12.Zhang, Li; Liu, Liwen; Zhuang, Yiqi; Tang, Hualian; Xu, Beilei; Bao, Junlin; Wu, Hongjiang
225.High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing.NANOSCALE RESEARCH LETTERS.2019.14.Liu, Huan; Han, Genquan; Liu, Yan; Hao, Yue
226.Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors.CHINESE PHYSICS B.2019.28.6.Bao, Si-Qin-Gao-Wa; Ma, Xiao-Hua; Chen, Wei-Wei; Yang, Ling; Hou, Bin; Zhu, Qing; Zhu, Jie-Jie; Hao, Yue
227.A polarization-induced InN-based tunnel FET without physical doping.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2019.34.6.Mao, Wei; Peng, Ziling; Yan, Cui; Wang, Haiyong; Du, Ming; Wang, Xiaofei; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue
228.A Multi-level Memristor Based on Al-Doped HfO2 Thin Film.NANOSCALE RESEARCH LETTERS.2019.14.Wu, Lei; Liu, Hongxia; Li, Jiabin; Wang, Shulong; Wang, Xing
229.Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances.NANOSCALE RESEARCH LETTERS.2019.14.Li, Jing; Liu, Yan; Han, Genquan; Zhou, Jiuren; Hao, Yue
230.Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal-oxide-semiconductor capacitors.JOURNAL OF PHYSICS D-APPLIED PHYSICS.2019.52.21.Zhang, Hongpeng; Yuan, Lei; Jia, Renxu; Tang, Xiaoyan; Hu, Jichao; Zhang, Yimen; Zhang, Yuming; Sun, Jianwu
231.A local congestion elimination technique driven by overflow.IEICE ELECTRONICS EXPRESS.2020.17.17.Wu, Wei; Di, Zhixiong; Shi, Jiangyi; Feng, Quanyuan; Tang, Zhengguang
232.An Optical Fiber Sensor Coated with Electrospinning Polyvinyl Alcohol/Carbon Nanotubes Composite Film.SENSORS.2020.20.23.Li, Jinze; Liu, Xin; Sun, Hao; Wang, Liming; Zhang, Jianqi; Deng, Li; Ma, Tianhong
233.A self-clocked binary-seaching digital low-dropout regulator with fast transient response.IEICE ELECTRONICS EXPRESS.2020.17.21.Shi, Jiangyi; Zhao, Bo; Tang, Zhengguang; Ma, Peijun; Di, Zhixiong
234.Recent Progress in 3D Printing of Bioinspired Structures.FRONTIERS IN MATERIALS.2020.7.Wang, Danfeng; Chen, Dongdong; Chen, Zeyu
235.A Novel Bilinear Feature and Multi-Layer Fused Convolutional Neural Network for Tactile Shape Recognition.SENSORS.2020.20.20.Chu, Jie; Cai, Jueping; Song, He; Zhang, Yuxin; Wei, Linyu
236.High-performance infrared Ge-based plasmonic photodetector enhanced by dual absorption mechanism.APL PHOTONICS.2020.5.9.Wang, Liming; Zhang, Yichi; Wang, Bo; Wei, Ying; Zhang, Bei; Meng, Lingyao; Liu, Tao; Wang, Bin; Han, Benguang; Jiang, Zuimin; Hu, Huiyong
237.Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping.APPLIED PHYSICS LETTERS.2020.117.5.Wang, Guangyao; Deng, Wenjie; Chen, Xiaoqing; Wang, Peng; Xiao, Yu; Li, Jingfeng; Chu, Feihong; Liu, Beiyun; Chen, Yongfeng; Lu, Yue; Sui, Manling; Liu, Zhihong; Diao, Xungang; Yan, Hui; Zhang, Yongzhe
238.Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.NANOSCALE RESEARCH LETTERS.2020.15.1.Li, Shulun; Chen, Yao; Shang, Xiangjun; Yu, Ying; Yang, Jiawei; Huang, Junhui; Su, Xiangbin; Shen, Jiaxin; Sun, Baoquan; Ni, Haiqiao; Su, Xingliang; Wang, Kaiyou; Niu, Zhichuan
239.Ultrasoft Liquid Metal Elastomer Foams with Positive and Negative Piezopermittivity for Tactile Sensing.ADVANCED FUNCTIONAL MATERIALS.2020.30.36.Yang, Jiayi; Tang, David; Ao, Jinping; Ghosh, Tushar; Neumann, Taylor V.; Zhang, Dongguang; Piskarev, Egor; Yu, Tingting; Truong, Vi Khanh; Xie, Kai; Lai, Ying-Chih; Li, Yang; Dickey, Michael D.
240.Graphene Hybrid Structures for Integrated and Flexible Optoelectronics.ADVANCED MATERIALS.2020.32.27.Chen, Xiaoqing; Shehzad, Khurram; Gao, Li; Long, Mingsheng; Guo, Hui; Qin, Shuchao; Wang, Xiaomu; Wang, Fengqiu; Shi, Yi; Hu, Weida; Xu, Yang; Wang, Xinran
241.Analysis and Design of Low-Complexity Stochastic DEM Encoder for Reduced-Distortion Multi-bit DAC in Sigma-Delta Modulators.CIRCUITS SYSTEMS AND SIGNAL PROCESSING.Li, Di; Fei, Chunlong; Zhang, Qidong
242.Growth and Magnetism of Mn(x)Ge(1-x)Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy.CRYSTALS.2020.10.6.Yang, Maolong; Wang, Liming; You, Jie; Meng, Lingyao; Zhang, Yichi; Wang, Bo; Wang, Bin; Hu, Huiyong
243.Ge Schottky diode for improving energy conversion efficiency of the receiver of microwave wireless power transfer.ACTA PHYSICA SINICA.2020.69.10.Li Yu-Chen; Tchen Hang-Yu; Song Jian-Jun
244.Optical, Electronic Properties and Anisotropy in Mechanical Properties of X Type Carbon Allotropes.MATERIALS.2020.13.9.Cheng, Jiao; Zhang, Qidong
245.Non-Ohmic Variable-Range Hopping and Resistive Switching in SrTiO3 Domain Walls.PHYSICAL REVIEW LETTERS.2020.124.14.Ma, H. J. Harsan; Scott, J. F.
246.Temperature dependence of Raman scattering in GeSn films.JOURNAL OF RAMAN SPECTROSCOPY.Liu, Tao; Miao, Yuanhao; Wang, Liming; Zhu, Guangjian; Hu, Huiyong; Zhong, Zhenyang; Yang, Xinju; Jiang, Zuimin
247.Ohmic contact formation mechanism of Ge-doped 6H-SiC.JOURNAL OF CRYSTAL GROWTH.2020.534.Wang, Yutian; Zhang, Zuoyi; Zhou, Ke; Guo, Zeyu; Lei, Ming; Tian, Ye; Guo, Hui; Xiufang, Chen
248.Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit.ADVANCES IN CONDENSED MATTER PHYSICS.2020.2020.Liu, Wei-Feng; Wu, Xue-Mei; Song, Jian-Jun; Zhao, Xin-Yan; Xuan, Rong-Xi
249.Boosting Throughput and Efficiency of Hardware Spiking Neural Accelerators Using Time Compression Supporting Multiple Spike Codes.FRONTIERS IN NEUROSCIENCE.2020.14.Xu, Changqing; Zhang, Wenrui; Liu, Yu; Li, Peng
250.CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson's figure-of-merit of 8.8 THz V.APPLIED PHYSICS EXPRESS.2020.13.2.Xie, Hanlin; Liu, Zhihong; Gao, Yu; Ranjan, Kumud; Lee, Kenneth E.; Ng, Geok Ing
251.Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods.NANOSCALE RESEARCH LETTERS.2020.15.1.Zhu, Guangjian; Liu, Tao; Zhong, Zhenyang; Yang, Xinju; Wang, Liming; Jiang, Zuimin
252.ZnO-Based Ultraviolet Photodetectors with Tunable Spectral Responses.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.2019.13.12.Zheng, Meijuan; Xu, Yalun; Wang, Xiao; Zhang, Guozhen; Li, Wei; Jiang, Li; Zhang, Lei; Wu, Hao; Lin, Qianqian; Liu, Chang
253.Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f(T) of 310GHz.APPLIED PHYSICS EXPRESS.2019.12.12.Xie, Hanlin; Liu, Zhihong; Gao, Yu; Ranjan, Kumud; Lee, Kenneth E.; Ng, Geok Ing
254.Synergic effect of graphene and core-shells structured Au NR@SiO2@TiO2 in dye-sensitized solar cells.NANOTECHNOLOGY.2019.30.46.Bai, Lihua; Wen, Junqing; Tang, Yiwen; Wu, Hua; Zhang, Han; Wang, Xiao; He, Wanlin; Sun, Ruijuan
255.High rectification efficiency direct bandgap Ge1-xSnx Schottky diode for microwave wireless power transfer.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING.2019.125.10.Song, Jianjun; Zhao, Xinyan; Wu, Xuemei; Xuan, Rongxi
256.Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process.ADVANCES IN CONDENSED MATTER PHYSICS.2019.2019.Xue, Xiaohuan; Song, Jianjun; Xuan, Rongxi
257.Superhard three-dimensional carbon with one-dimensional conducting channels.NEW JOURNAL OF CHEMISTRY.2020.44.45.(19789-19795).Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
258.High-Performance beta-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process.IEEE ELECTRON DEVICE LETTERS.2020.41.12.(1794-1797).Li, Zhe; Cheng, Yanan; Xu, Yu; Hu, Zhuangzhuang; Zhu, Weidong; Chen, Dazheng; Feng, Qian; Zhou, Hong; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
259.Design and Fabrication of Vertical Metal/TiO2/beta-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.12.(5628-5632).Hu, Zhuangzhuang; Li, Jianguo; Zhao, Chunyong; Feng, Zhaoqing; Tian, Xusheng; Zhang, Yanni; Zhang, Yachao; Ning, Jing; Zhou, Hong; Zhang, Chunfu; Lv, Yuanjie; Kang, Xuanwu; Feng, Hao; Feng, Qian; Zhang, Jincheng; Hao, Yue
260.A 10-kS/s 625-Hz-Bandwidth 65-dB SNDR Second-Order Noise-Shaping SAR ADC for Biomedical Sensor Applications.IEEE SENSORS JOURNAL.2020.20.23.(13881-13891).Hu, Jin; Li, Dengquan; Liu, Maliang; Zhu, Zhangming
261.Enhanced transmission through a Si-InSb-Si bimaterial subwavelength grating with slits at the terahertz range.APPLIED OPTICS.2020.59.33.(10457-10463).Liu, Qing; Liu, Yan; Shao, Yao; Han, Genquan; Hao, Yue
262.High-Q resonance in GeSn-based bound states in the continuum microcavity.APPLIED OPTICS.2020.59.32.(10093-10101).Liu, Xinyi; Liu, Yan; Fang, Cizhe; Huang, Yan; Shao, Yao; Han, Genquan; Hao, Yue
263.Improvement of the water oxidation performance of Ti, F co-modified hematite by surface modification with a Co(salen) molecular cocatalyst.JOURNAL OF MATERIALS CHEMISTRY A.2020.8.41.(21613-21622).Wang, Ruiling; Kuwahara, Yasutaka; Mori, Kohsuke; Louis, Catherine; Bu, Yuyu; Yamashita, Hiromi
264.Improved the C - V Curve Shift, Trap State Responsiveness, and Dynamic R-ON of SBDs by the Composite 2-D-3-D Channel Heterostructure Under the OFF-State Stress.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.11.(4808-4812).Yang, Ling; Zhang, Meng; Hou, Bin; Mi, Minhan; Wu, Mei; Zhu, Qing; Lu, Yang; Zhu, Jiejie; Zhou, Xiaowei; Lv, Ling; Ma, Xiaohua; Hao, Yue
265.Effects of Temperature on the Performance of Hf0.5Zr0.5O2-Based Negative Capacitance FETs.IEEE ELECTRON DEVICE LETTERS.2020.41.11.(1625-1628).Wang, Chengxu; Wu, Jibao; Yu, Hao; Han, Genquan; Miao, Xiangshui; Wang, Xingsheng
266.Physically Transient Optic-Neural Synapse for Secure In-Sensor Computing.IEEE ELECTRON DEVICE LETTERS.2020.41.11.(1641-1644).Dang, Bingjie; Ma, Lan; Yan, Longhao; Wang, Saisai; Liu, Keqin; Xu, Liying; Cheng, Caidie; Zhao, Momo; Yang, Yuchao; Wang, Hong; Hao, Yue; Huang, Ru
267.Novel Lateral Double-Diffused MOSFET With Ultralow On-Resistance by the Variable Resistivity of Drift Region.IEEE ELECTRON DEVICE LETTERS.2020.41.11.(1681-1684).Wang, Yandong; Duan, Baoxing; Song, Haitao; Yang, Yintang
268.Generation of multi-channel chaotic signals with time delay signature concealment and ultrafast photonic decision making based on a globally-coupled semiconductor laser network.PHOTONICS RESEARCH.2020.8.11.(1792-1799).Han, Yanan; Xiang, Shuiying; Wang, Yang; Wang, Yuanting; Wang, Bo; Wen, Aijun; Hao, Yue
269.Network-on-chip heuristic mapping algorithm based on isomorphism elimination for NoC optimisation.IET COMPUTERS AND DIGITAL TECHNIQUES.2020.14.6.(272-280).Weng Xiaodong; Liu Yi; Yang Yintang
270.Adjusting transmissivity based on grapheme-h-BN-graphene heterostructure as a tunable phonon-plasmon coupling system in mid-infrared band.JOURNAL OF MATERIALS SCIENCE.2021.56.4.(3210-3219).Cai, Ming; Wang, Shulong; Liu, Zhihong; Wang, Yindi; Gao, Bo; Han, Tao; Liu, Hongxia; Zhang, Haifeng; Qiao, Yanbin
271.Study on uniaxial stress intensity of MOS channels along different crystal planes induced by SiN-film.MATERIALS EXPRESS.2020.10.10.(1753-1757).Wang, Yueyu; Song, Jianjun; Dai, Xianying; Zhao, Tianlong
272.1.48 MV.cm(-1)/0.2 m Omega.cm(2) GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination.IEEE ELECTRON DEVICE LETTERS.2020.41.10.(1476-1479).Bian, Zhaoke; Zhang, Jincheng; Zhao, Shenglei; Zhang, Yachao; Duan, Xiaoling; Chen, Jiabo; Ning, Jing; Hao, Yue
273.SRNoC: An Ultra-Fast Configurable FPGA-Based NoC Simulator Using Switch-Router Architecture.IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS.2020.39.10.(2798-2811).Xu, Changqing; Liu, Yi; Yang, Yintang
274.Impact of Implanted Edge Termination on Vertical beta-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.10.(3948-3953).Zhang, Yanni; Zhang, Jincheng; Feng, Zhaoqing; Hu, Zhuangzhuang; Chen, Jiabo; Dang, Kui; Yan, Qinglong; Dong, Pengfei; Zhou, Hong; Hao, Yue
275.N-Substituted Phenothiazines as Environmentally Friendly Hole-Transporting Materials for Low-Cost and Highly Stable Halide Perovskite Solar Cells.ACS OMEGA.2020.5.36.(23334-23342).Salunke, Jagadish; Guo, Xing; Liu, Maning; Lin, Zhenhua; Candeias, Nuno R.; Priimagi, Arri; Chang, Jingjing; Vivo, Paola
276.Patterned sapphire substrates cause a wavelength shift of green InGaN light-emitting diodes.OPTICAL MATERIALS EXPRESS.2020.10.9.(2045-2053).Wu, Haoyang; Xu, Shengrui; Feng, Lansheng; Mao, Wei; Tao, Hongchang; Gao, Yuan; Huang, Yuzhi; Wang, Xuewei; Li, Wen; Su, Huake; Zhang, Jincheng; Hao, Yue
277.Rabi splitting obtained in a monolayer BP-plasmonic heterostructure at room temperature.OPTICAL MATERIALS EXPRESS.2020.10.9.(2159-2170).HUANG, Y. A. N.; LIU, Y. A. N.; SHAO, Y. A. O.; HAN, G. E. N. Q. U. A. N.; ZHANG, J. I. N. C. H. E. N. G.; HAO, Y. U. E.
278.Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor.IEEE ELECTRON DEVICE LETTERS.2020.41.9.(1340-1343).Peng, Yue; Xiao, Wenwu; Han, Genquan; Liu, Yan; Liu, Fenning; Liu, Chen; Zhou, Yichun; Yang, Nan; Zhong, Ni; Duan, Chungang; Hao, Yue
279.Suppressing intrinsic self-doping of CsPbIBr(2)films for high-performance all-inorganic, carbon-based perovskite solar cells.SUSTAINABLE ENERGY & FUELS.2020.4.9.(4506-4515).Zhang, Zeyang; He, Fengqin; Zhu, Weidong; Chen, Dandan; Chai, Wenming; Chen, Dazheng; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
280.Improvement of Electron Transport Property and ON-Resistance in Normally-OFF Al2O3/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.9.(3541-3547).Zhu, Jiejie; Jing, Siqi; Ma, Xiaohua; Liu, Siyu; Wang, Pengfei; Zhang, Yingcong; Zhu, Qing; Mi, Minhan; Hou, Bin; Yang, Ling; Kuball, Martin; Hao, Yue
281.Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.9.(3632-3636).Peng, Yue; Xiao, Wenwu; Liu, Fenning; Liu, Yan; Han, Genquan; Yang, Nan; Zhong, Ni; Duan, Chungang; Liu, Chen; Zhou, Yichun; Feng, Ze; Dong, Hong; Hao, Yue
282.Wideband compact power amplifier based on novel spatial power combining technique formillimeter-waveapplications.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS.2021.63.1.(160-165).Lu, Qijun; Deng, Jianqin; Shan, Guangbao; Zhu, Zhangming
283.An opamp-free second-order noise-shaping SAR ADC with 4x passive gain using capacitive charge pump.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2020.105.1.(125-133).Yi, Pinyun; Zhu, Zhangming; Li, Dengquan; Fang, Liang
284.Improved Photoresponse Performance of Self-Powered beta-Ga2O3/NiO Heterojunction UV Photodetector by Surface Plasmonic Effect of Pt Nanoparticles.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.8.(3199-3204).Yu, Jiangang; Yu, Miao; Wang, Zhuo; Yuan, Lei; Huang, Yu; Zhang, Lichun; Zhang, Yuming; Jia, Renxu
285.Wafer-Scale Si-GaN Monolithic Integrated E-Mode Cascode FET Realized by Transfer Printing and Self-Aligned Etching Technology.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.8.(3304-3308).Zhang, Jiaqi; Zhang, Weihang; Wu, Yichang; Zhang, Yachao; Peng, Yue; Feng, Zhaoqing; Chen, Dazheng; Zhao, Shenglei; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
286.A High-Power LED Driver Based on Single Inductor-Multiple Output DC-DC Converter With High Dimming Frequency and Wide Dimming Range.IEEE TRANSACTIONS ON POWER ELECTRONICS.2020.35.8.(8501-8511).Zhang, Yimeng; Rong, Guangjian; Qu, Shasha; Song, Qingwen; Tang, Xiaoyan; Zhang, Yuming
287.Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration.IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS.2020.67.8.(6597-6606).Dang, Kui; Zhang, Jincheng; Zhou, Hong; Yin, Shan; Zhang, Tao; Ning, Jing; Zhang, Yachao; Bian, Zhaoke; Chen, Jiabo; Duan, Xiaoling; Zhao, Shenglei; Hao, Yue
288.Dual-Phase CsPbCl3-Cs4PbCl6 Perovskite Films for Self-Powered, Visible-Blind UV Photodetectors with Fast Response.ACS APPLIED MATERIALS & INTERFACES.2020.12.29.(32961-32969).Zhu, Weidong; Deng, Minyu; Chen, Dandan; Zhang, Zeyang; Chai, Wenming; Chen, Dazheng; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
289.Characteristic and Robustness of Trench Floating Limiting Rings for 4H-SiC Junction Barrier Schottky Rectifiers.IEEE ELECTRON DEVICE LETTERS.2020.41.7.(1056-1059).Yuan, Hao; Liu, Yancong; He, Yanjing; Hu, Yanfei; Zhang, Tingsong; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; He, Xiaoning; Qian, Qingyou; Xiao, Li
290.Compact Dual-Band Inverted-Microstrip Ridge Gap Waveguide Bandpass Filter.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.2020.68.7.(2625-2632).Deng, Jing-Ya; Li, Ming-Jie; Sun, Dongquan; Guo, Li-Xin; Ma, Xiao-Hua
291.High Input Impedance Low-Noise CMOS Analog Frontend IC for Wearable Electrocardiogram Monitoring.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS.2020.67.7.(1169-1173).Zhang, Chenggao; Wang, Jingyu; Wang, Ling; Liu, Lianxi; Li, Yani; Zhu, Zhangming
292.An 11-bit 100-MS/s Pipelined-SAR ADC Reusing PVT-Stabilized Dynamic Comparator in 65-nm CMOS.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS.2020.67.7.(1174-1178).Zhang, Jin; Ren, Xiaoqian; Liu, Shubin; Chan, Chi-Hang; Zhu, Zhangming
293.An 8-ch LIDAR Receiver Based on TDC With Multi-Interval Detection and Real-Time In Situ Calibration.IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT.2020.69.7.(5081-5090).Li, Dong; Liu, Maliang; Ma, Rui; Zhu, Zhangming
294.Improved Interface Contact for Highly Stable All-Inorganic CsPbI2Br Planar Perovskite Solar Cells.ACS APPLIED ENERGY MATERIALS.2020.3.6.(5173-5181).He, Jian; Su, Jie; Ning, Zhijun; Ma, Jing; Zhou, Long; Lin, Zhenhua; Zhang, Jincheng; Liu, Shengzhong; Chang, Jingjing; Hao, Yue
295.BiVO4 Photoanode Modification by In-Doping and Anoxic Annealing by Synergistic Regulation.ACS SUSTAINABLE CHEMISTRY & ENGINEERING.2020.8.24.(9184-9194).Zhang, Yaping; Chen, Xi; Jiang, Fengqiu; Bu, Yuyu; Ao, Jin-Ping
296.An improved direct extraction method for InP HBT small-signal model.JOURNAL OF INFRARED AND MILLIMETER WAVES.2020.39.3.(295-299).Qi Jun-Jun; Lyu Hong-Liang; Zhang Yu-Ming; Zhang Yi-Men; Zhang Jin-Can
297.Physically Transient W/ZnO/MgO/W Schottky Diode for Rectifying and Artificial Synapse.IEEE ELECTRON DEVICE LETTERS.2020.41.6.(844-847).Wang, Saisai; Dang, Bingjie; Sun, Jing; Zhao, Momo; Yang, Mei; Ma, Xiaohua; Wang, Hong; Hao, Yue
298.MTL-based modeling and analysis of the effects of TSV noise coupling on the power delivery network in 3D ICs.JOURNAL OF COMPUTATIONAL ELECTRONICS.2020.19.2.(543-554).Zhu, Weijun; Wang, Yang; Dong, Gang; Yang, Yintang; Li, Yuejin; Song, Dongliang
299.Combustion-processed NiO/ALD TiO2 bilayer as a novel low-temperature electron transporting material for efficient all-inorganic CsPbIBr2 solar cell.SOLAR ENERGY.2020.203.(10-18).Chai, Wenming; Zhu, Weidong; Chen, Dandan; Chen, Dazheng; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
300.Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study.ACS OMEGA.2020.5.20.(11792-11798).An, Jiadai; Dai, Xianying; Zhang, Qian; Guo, Runqiu; Feng, Lansheng
301.Experimental investigation of the time-delay signature of chaotic output and dual-channe physical random bit generation in 1550 nm mutually coupled VCSELs with common FBG filtered feedback.APPLIED OPTICS.2020.59.15.(4583-4588).Cai, Wei; Xiang, Shuiying; Cao, Xingyu; Wen, Aijun; Hao, Yue
302.A 0.5 to 6 GHz wideband cascode LNA with enhanced linearity by employing resistive shunt-shuntfeedback and derivative superposition.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS.2020.62.10.(3157-3162).Li, Zhenrong; Wang, Simin; Li, Zhen; Tang, Hualian; Zhuang, Yiqi
303.Slow-Wave Substrate Integrated Groove Gap Waveguide.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2020.30.5.(461-464).Deng, Jing-Ya; Wang, Zhu-Jun; Sun, Dongquan; Yuan, Dan-Dan; Yong, Ting; Guo, Li-Xin; Ma, Xiao-Hua
304.Ultrawideband Power-Switchable Transmitter With 17.7-dBm Output Power for See-Through-Wall Radar.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS.2020.28.5.(1331-1335).Liu, Maliang; Xiao, Jinhai; Luo, Peng; Zhu, Zhangming; Yang, Yintang
305.High Resolution ADC for Ultrasound Color Doppler Imaging Based on MASH Sigma-Delta Modulator.IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING.2020.67.5.(1438-1449).Li, Di; Qian, Xuejun; Li, Runze; Fei, Chunlong; Jiang, Laiming; Chen, Xuyuan; Yang, Yintang; Zhou, Qifa
306.A Handheld Nano Through-Wall Radar Locating With the Gain-Enhanced Vivaldi Antenna.IEEE SENSORS JOURNAL.2020.20.8.(4420-4429).Zhang, Jianqiang; Lan, Haokun; Liu, Maliang; Yang, Yintang
307.AC-SJ VDMOS with ultra-low resistance.MICRO & NANO LETTERS.2020.15.4.(230-233).Wang, Yandong; Duan, Baoxing; Zhang, Chen; Wang, Xiameng; Yang, Yintang
308.TCAD simulation of a double L-shaped gate tunnel field-effect transistor with a covered source channel.MICRO & NANO LETTERS.2020.15.4.(272-276).Xie, Haiwu; Liu, Hongxia; Han, Tao; Li, Wei; Chen, Shupeng; Wang, Shulong
309.A Broadband InP Track-and-Hold Amplifier Using Emitter Capacitive/Resistive Degeneration.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2020.30.4.(391-394).Li, Shaojun; Su, Yongbo; Lv, Hongliang; Zhou, Lei; Zhang, Yimen; Zhang, Yuming; Hu, Jun; Yang, Feng; Jin, Zhi
310.Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.4.(1730-1736).Zhang, Hongpeng; Yuan, Lei; Tang, Xiaoyan; Hu, Jichao; Sun, Jianwu; Zhang, Yimen; Zhang, Yuming; Jia, Renxu
311.Lateral beta-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm(2).IEEE ELECTRON DEVICE LETTERS.2020.41.4.(537-540).Lv, Yuanjie; Liu, Hongyu; Zhou, Xingye; Wang, Yuangang; Song, Xubo; Cai, Yuncong; Yan, Qinglong; Wang, Chenlu; Liang, Shixiong; Zhang, Jincheng; Feng, Zhihong; Zhou, Hong; Cai, Shujun; Hao, Yue
312.Physically Transient Resistive Memory With Programmable Switching Behaviors in MgO-Mo Based Devices.IEEE ELECTRON DEVICE LETTERS.2020.41.4.(553-556).Wang, Saisai; Dang, Bingjie; Sun, Jing; Song, Fang; Zhao, Momo; Yang, Mei; Ma, Xiaohua; Wang, Hong; Hao, Yue
313.A 66-dB Linear Dynamic Range, 100-dB center dot Omega Transimpedance Gain TIA With High-Speed PDSH for LiDAR.IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT.2020.69.4.(1020-1028).Ma, Rui; Liu, Maliang; Zheng, Hao; Zhu, Zhangming
314.Novel modulation method for torque ripple suppression of brushless DC motors based on SIMO DC-DC converter.JOURNAL OF POWER ELECTRONICS.2020.20.3.(720-730).Sun, Shikai; Guo, Hui; Zhang, Yimeng; Jia, Yupeng; Lv, Hongliang; Song, Qingwen; Tang, Xiaoyan; Zhang, Yuming
315.Tunable surface modification of a hematite photoanode by a Co(salen)-based cocatalyst for boosting photoelectrochemical performance.CATALYSIS SCIENCE & TECHNOLOGY.2020.10.6.(1714-1723).Wang, Ruiling; Kuwahara, Yasutaka; Mori, Kohsuke; Bu, Yuyu; Yamashita, Hiromi
316.Novel SOI LIGBT with fast-switching by the electric field modulation.MICRO & NANO LETTERS.2020.15.3.(155-158).Sun, Licheng; Duan, Baoxing; Yang, Yintang
317.A Robust Bio-IA With Digitally Controlled DC-Servo Loop and Improved Pseudo-Resistor.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS.2020.67.3.(440-444).Liu, Lianxi; Hua, Tianyuan; Zhang, Yi; Mu, Junchao; Zhu, Zhangming
318.Zero-lag chaos synchronization properties in a hierarchical tree-type network consisting of mutually coupled semiconductor lasers.NONLINEAR DYNAMICS.2020.99.4.(2893-2906).Xiang, Shuiying; Han, Yanan; Wang, Haoning; Wen, Aijun; Hao, Yue
319.All-optics neuromorphic XOR operation with inhibitory dynamics of a single photonic spiking neuron based on a VCSEL-SA.OPTICS LETTERS.2020.45.5.(1104-1107).Xiang, Shuiying; Ren, Zhenxing; Zhang, Yahui; Song, Ziwei; Hao, Yue
320.Accumulation-Mode Device: New Power MOSFET Breaking Superjunction Silicon Limit by Simulation Study.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.3.(1085-1089).Duan, Baoxing; Wang, Yandong; Sun, Licheng; Yang, Yintang
321.Mismatch of Ferroelectric Film on Negative Capacitance FETs Performance.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.3.(1297-1304).Liang, Yuhua; Zhu, Zhangming; Li, Xueqing; Gupta, Sumeet Kumar; Datta, Suman; Narayanan, Vijaykrishnan
322.Normally-Off beta-Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure.IEEE ELECTRON DEVICE LETTERS.2020.41.3.(333-336).Feng, Zhaoqing; Tian, Xusheng; Li, Zhe; Hu, Zhuangzhuang; Zhang, Yanni; Kang, Xuanwu; Ning, Jing; Zhang, Yachao; Zhang, Chunfu; Feng, Qian; Zhou, Hong; Zhang, Jincheng; Hao, Yue
323.Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing.IEEE ELECTRON DEVICE LETTERS.2020.41.3.(357-360).Wu, Pei-Yu; Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Chen, Wei-Jang; Yang, Chih-Cheng; Chen, Wen-Chung; Tai, Mao-Chou; Tan, Yung-Fang; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Tsai, Tsung-Ming; Sze, Simon M.
324.Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage.IEEE ELECTRON DEVICE LETTERS.2020.41.3.(441-444).Hu, Zhuangzhuang; Zhou, Hong; Kang, Xuanwu; Zhang, Jincheng; Hao, Yue; Lv, Yuanjie; Zhao, Chunyong; Feng, Qian; Feng, Zhaoqing; Dang, Kui; Tian, Xusheng; Zhang, Yachao; Ning, Jing
325.Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode With Improved On-Current and Ideality Factor.IEEE ELECTRON DEVICE LETTERS.2020.41.3.(457-460).Zhang, Yanni; Zhang, Jincheng; Liu, Zhihong; Xu, Shengrui; Chen, Kai; Ning, Jing; Zhang, Chunfu; Zhang, Lei; Ma, Peijun; Zhou, Hong; Hao, Yue
326.A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer.IEEE TRANSACTIONS ON POWER ELECTRONICS.2020.35.3.(2247-2252).Dang, Kui; Wei, Ke; Hao, Yue; Zhang, Jincheng; Zhou, Hong; Huang, Sen; Zhang, Tao; Bian, Zhaoke; Zhang, Yachao; Wang, Xinhua; Zhao, Shenglei
327.Hysteresis effects on carrier transport and photoresponse characteristics in hybrid perovskites.JOURNAL OF MATERIALS CHEMISTRY C.2020.8.6.(1962-1971).Pang, Tiqiang; Sun, Kai; Wang, Yucheng; Luan, Suzhen; Zhang, Yuming; Zhu, Yuejin; Hu, Ziyang; Jia, Renxu
328.Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser.JOURNAL OF RUSSIAN LASER RESEARCH.2020.41.1.(98-103).Zhang, Junqin; Ma, Jinge; Yang, Yintang
329.Adaptive maintain power signature scheme for power over ethernet system.IET POWER ELECTRONICS.2020.13.2.(295-299).Li, Yongyuan; Zhu, Zhangming
330.Dy-doped BiFeO3-PbFeO3-based piezoelectric ceramics for nondestructive testing ultrasonic transducer applications.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS.2020.31.3.(1839-1845).Sun, Xinhao; Fei, Chunlong; Chen, Qiang; Li, Di; Tang, Zhuohua; Zhuang, Jian; Wu, Yan; Chen, Jun; Wu, Runcong; Yang, Yintang
331.An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping.CARBON.2020.157.(340-349).Hu, Yanfei; Liu, Jialin; Dou, Wentao; Mao, Kaili; Guo, Lixin; Chong, Laiyuan; Hu, Jichao; Yuan, Hao; He, Yanjing; Guo, Hui; Zhang, Yuming
332.Photonic spiking neural network based on excitable VCSELs-SA for sound azimuth detection.OPTICS EXPRESS.2020.28.2.(1561-1573).Song, Zi Wei; Xiang, Shui Ying; Ren, Zhen Xing; Wang, Su Hong; Wen, Ai Jun; Hao, Yue
333.Time-delay signature concealment of chaos and ultrafast decision making in mutually coupled semiconductor lasers with a phase-modulated Sagnac loop.OPTICS EXPRESS.2020.28.2.(1665-1678).Ma, Yuanting; Xiang, Shuiying; Guo, Xingxing; Song, Ziwei; Wen, Aijun; Hao, Yue
334.Sacrificial additive-assisted film growth endows self-powered CsPbBr3 photodetectors with ultra-low dark current and high sensitivity.JOURNAL OF MATERIALS CHEMISTRY C.2020.8.1.(209-218).Zhu, Weidong; Deng, Minyu; Chen, Dandan; Chen, Dazheng; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
335.Numerical Modelling of Interconnect Electromigration Under Non-DC Stressing Conditions.IETE JOURNAL OF RESEARCH.2020.66.1.(85-90).Wu, Zhenyu; Li, Chao; Zhao, Zebo; Yang, Yintang
336.Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2020.8.(1082-1088).Zhang, Yipan; Duan, Baoxing; Yang, Yintang
337.A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2020.8.(905-910).Gao, Rui; Shi, Yijun; He, Zhiyuan; Chen, Yiqiang; En, Yunfei; Huang, Yun; Ji, Zhigang; Zhang, Jianfu; Zhang, Weidong; Zheng, Xuefeng; Zhang, Jinfeng; Liu, Yang
338.Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2020.8.(731-737).Liu, Yu-Qian; Chai, Chang-Chun; Wu, Han; Zhang, Yu-Hang; Shi, Chun-Lei; Yang, Yin-Tang
339.Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics.IEEE ACCESS.2020.8.(104503-104510).Li, Dongxun; Zhang, Yuming; Tang, Xiaoyan; He, Yanjing; Song, Qingwen; Zhang, Yimen
340.Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2020.8.1.(559-564).Wang, Xiameng; Duan, Baoxing; Yang, Xin; Yang, Yintang
341.Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes.IEEE ACCESS.2020.8.(93039-93047).Yuan, Hao; Wang, Chengsen; Tang, Xiaoyan; Song, Qingwen; He, Yanjing; Zhang, Yimen; Zhang, Yuming; Xiao, Li; Wang, Liangyong; Wu, Yong
342.Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2020.8.1.(134-139).Wang, Ying; Li, Liu-An; Li, Chong; Ao, Jin-Ping; Wang, Xiao; Hao, Yue
343.Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.2020.8.1.(442-447).Duan, Baoxing; Yang, Luoyun; Wu, Hao; Yang, Yintang
344.Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.IEEE ACCESS.2020.8.(57126-57135).Liu, Shuang; Song, Xiufeng; Zhang, Jincheng; Zhao, Shenglei; Luo, Jun; Zhang, Hong; Zhang, Yachao; Zhang, Weihang; Zhou, Hong; Liu, Zhihong; Hao, Yue
345.Millimeter-Wave Antenna-in-Package Applications Based on D263T Glass Substrate.IEEE ACCESS.2020.8.(67921-67928).Zhang, Tao; Lu, Qijun; Zhu, Zhangming; Hu, Jincan; Xia, Haiyang; Li, Lianming; Cui, Tie Jun
346.Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics.IEEE ACCESS.2020.8.(20043-20050).Su, Kai; Ren, Zeyang; Peng, Yue; Zhang, Jinfeng; Zhang, Jincheng; Zhang, Yachao; He, Qi; Zhang, Chunfu; Hao, Yue
347.A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter.IEEE ACCESS.2020.8.(23559-23567).Yang, Shizheng; Lv, Hongliang; Lu, Bin; Yan, Silu; Zhang, Yuming
348.Low On-Resistance H-Diamond MOSFETs With 300 degrees C ALD-Al2O3 Gate Dielectric.IEEE ACCESS.2020.8.(50465-50471).Ren, Zeyang; He, Qi; Xu, Jiamin; Yuan, Guansheng; Zhang, Jinfeng; Zhang, Jincheng; Su, Kai; Hao, Yue
349.Gate driver for parallel connection SiC MOSFETs with over-current protection and dynamic current balancing scheme.JOURNAL OF POWER ELECTRONICS.2020.20.1.(319-328).Zhang, Yimeng; Song, Qingwen; Tang, Xiaoyan; Zhang, Yuming
350.Low-power asymmetric switching scheme with segmented capacitive architecture for SAR ADCs.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2020.102.1.(253-264).Yue, Peiyi; Zhang, Yanbo; Liu, Shubin; Zhu, Zhangming
351.Frequency-Improved 4H-SiC IGBT With Multizone Collector Design.IEEE TRANSACTIONS ON ELECTRON DEVICES.2020.67.1.(198-203).Tang, Guannan; Tang, Xiaoyan; Song, Qingwen; Yang, Shuai; Zhang, Yimeng; Zhang, Yimen; Zhang, Yuming
352.A High-Throughput Subspace Pursuit Processor for ECG Recovery in Compressed Sensing Using Square-Root-Free MGS QR Decomposition.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS.2020.28.1.(174-187).Liu, Yizhong; Song, Tian; Zhuang, Yiqi
353.SiC gate-controlled bipolar-field-effect composite transistor with large on-state current.MICRO & NANO LETTERS.2019.14.14.(1406-1409).Duan, Baoxing; Zhang, Yipan; Dong, Ziming; Yang, Yintang
354.PBCF-Graphene: A 2D Sp(2) Hybridized Honeycomb Carbon Allotrope with a Direct Band Gap.CHEMNANOMAT.2020.6.1.(139-147).Zhang, Wei; Chai, Changchun; Fan, Qingyang; Song, Yanxing; Yang, Yintang
355.Performance-enhanced solar-blind photodetector based on a CH3NH3PbI3/beta-Ga2O3 hybrid structure.JOURNAL OF MATERIALS CHEMISTRY C.2019.7.45.(14205-14211).Dong, Linpeng; Pang, Tiqiang; Yu, Jiangang; Wang, Yucheng; Zhu, Wenguo; Zheng, Huadan; Yu, Jianhui; Jia, Renxu; Chen, Zhe
356.Utilization of Negative-Capacitance FETs to Boost Analog Circuit Performances.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS.2019.27.12.(2855-2860).Liang, Yuhua; Zhu, Zhangming; Li, Xueqing; Gupta, Sumeet Kumar; Datta, Suman; Narayanan, Vijaykrishnan
357.Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior.IEEE ELECTRON DEVICE LETTERS.2019.40.12.(1933-1936).Peng, Yue; Xiao, Wenwu; Han, Genquan; Liu, Yan; Wu, Jibao; Wang, Kuan; He, Yuhui; Yu, Zhihao; Wang, Xinran; Xu, Nuo; Liu, Tsu-Jae King; Hao, Yue
358.Reducing Defects in Perovskite Solar Cells with White Light Illumination-Assisted Synthesis.ACS ENERGY LETTERS.2019.4.12.(2821-2829).Cao, Huanqi; Li, Jinzhao; Dong, Zheng; Su, Jie; Chang, Jingjing; Zhao, Qing; Li, Ziyi; Yang, Liying; Yin, Shougen
359.A 99.8% Energy-Reduced Two-Stage Mixed Switching Scheme for SAR ADC Without Reset Energy.CIRCUITS SYSTEMS AND SIGNAL PROCESSING.2019.38.12.(5426-5447).Chen, Yushi; Zhuang, Yiqi; Tang, Hualian
360.Study on Carrier Mobility Model for PD-Ge Monolithic Optoelectronic Integration Chips.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS.2019.14.12.(1776-1785).Ren Yuan; Song Jianjun; Yang Wen; Dai Xianying; Zhao Tianlong
361.Origination of Anomalous Current Fluctuation in Perovskite Solar Cells.ACS APPLIED ENERGY MATERIALS.2019.2.11.(8138-8144).Wang, Yanyan; Sun, Kai; Xu, Haoyuan; Zhang, Houcheng; Zhang, Jing; Zhu, Yuejin; Jia, Renxu; Hu, Ziyang
362.More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With > 230 MW/cm(2) Power Figure-of-Merit.IEEE ELECTRON DEVICE LETTERS.2019.40.11.(1724-1727).Wu, Yinhe; Zhang, Jincheng; Zhao, Shenglei; Zhang, Weihang; Zhang, Yachao; Duan, Xiaoling; Chen, Jiabo; Hao, Yue
363.High-Performance Vertical beta-Ga2O3 Schottky Barrier Diode With Implanted Edge Termination.IEEE ELECTRON DEVICE LETTERS.2019.40.11.(1788-1791).Zhou, Hong; Yan, Qinglong; Zhang, Jincheng; Lv, Yuanjie; Liu, Zhihong; Zhang, Yanni; Dang, Kui; Dong, Pengfei; Feng, Zhaoqing; Feng, Qian; Ning, Jing; Zhang, Chunfu; Ma, Peijun; Hao, Yue
364.Simulation Investigation of Laterally Downscaled N-Polar GaN HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2019.66.11.(4673-4678).Chen, Wanjiao; Zhang, Jinfeng; He, Qi; Zhou, Hong; Huang, Xu; Ren, Zeyang; Su, Kai; Mao, Wei; Xue, Junshuai; Zheng, Xuefeng; Zhang, Jincheng; Hao, Yue
365.Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process.IEEE TRANSACTIONS ON ELECTRON DEVICES.2019.66.11.(4706-4709).Zheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.
366.Interfacial TiO2 atomic layer deposition triggers simultaneous crystallization control and band alignment for efficient CsPbIBr2 perovskite solar cell.ORGANIC ELECTRONICS.2019.74.(103-109).Zhu, Weidong; Chai, Wenming; Zhang, Zeyang; Chen, Dazheng; Chang, Jingjing; Liu (Frank), Shengzhong; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
367.Structure and enhanced piezoelectric performance of BiScO3-PbTiO3-Pb(Ni1/3Nb2/3)O-3 ternary high temperature piezoelectric ceramics.JOURNAL OF ALLOYS AND COMPOUNDS.2019.806.(11-18).Zhao, Tian-Long; Fei, Chunlong; Dai, Xianying; Song, Jianjun; Dong, Shuxiang
368.Optimization of N-polar GaN growth on bulk GaN substrate by MOCVD.MATERIALS LETTERS.2019.253.(314-316).Wang, Xuewei; Xu, Shengrui; Du, Jinjuan; Peng, Ruoshi; Fan, Xiaomeng; Zhao, Ying; Li, Wen; Zhang, Jincheng; Hao, Yue
369.Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature.JOURNAL OF ALLOYS AND COMPOUNDS.2019.805.(999-1003).He, Yanjing; Lv, Hongliang; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimeng; Han, Chao; Guo, Tao; He, Xiaoning; Zhang, Yimen; Zhang, Yuming
370.A > 3 kV/2.94 m Omega.cm(2) and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique.IEEE ELECTRON DEVICE LETTERS.2019.40.10.(1583-1586).Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Wang, Yi; Chen, Tangsheng; Zhang, Kai; Zhang, Yachao; Dang, Kui; Bian, Zhaoke; Zhang, Jinfeng; Xu, Shengrui; Duan, Xiaoling; Ning, Jing; Hao, Yue
371.A 92.1% area-efficient charge sharing switching scheme with near zero reset energy for SAR ADCs.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2019.101.1.(119-131).Yue, Peiyi; Zhang, Yanbo; Li, Yongyuan; Zhu, Zhangming
372.A highly energy-efficient, area-efficient switching scheme for SAR ADC in biomedical applications.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2019.101.1.(133-143).Chen, Yushi; Zhuang, Yiqi; Tang, Hualian
373.Analysis and optimization scheme of a 2nd-order passive noise shaping SAR ADC architecture.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2019.101.1.(145-153).Ye, Jiawei; Li, Yongyuan; Liu, Shubin; Ding, Ruixue; Zhu, Zhangming
374.Simultaneously enhanced performance and stability of inverted perovskite solar cells via a rational design of hole transport layer.ORGANIC ELECTRONICS.2019.73.(69-75).Lin, Zhenhua; Zhou, Jiawen; Zhou, Long; Wang, Kaixuan; Li, Wenqiang; Su, Jie; Hao, Yue; Li, Yuan; Chang, Jingjing
375.Analysis of interface trap charges on performance variation in L-shaped tunnel field-effect transistor.MICRO & NANO LETTERS.2019.14.11.(1140-1145).Guo, Jia-Min; Li, Cong; Yan, Zhi-Rui; Jiang, Hao-Feng; Zhuang, Yi-Qi
376.The band structure change of Hf0.5Zr0.5O2/Ge system upon post deposition annealing.APPLIED SURFACE SCIENCE.2019.488.(778-782).Feng, Ze; Peng, Yue; Liu, Huan; Sun, Yong; Wang, Yitong; Meng, Meng; Liu, Hui; Wang, Jiaou; Wu, Rui; Wang, Xinglu; Cho, Kyeongjae; Han, Genquan; Dong, Hong
377.Thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method.MICRO & NANO LETTERS.2019.14.10.(1052-1055).Chen, Dazheng; Xu, Yu; An, Zhiyuan; Li, Zhe; Zhang, Chunfu
378.Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology.MICRO & NANO LETTERS.2019.14.10.(1092-1095).Duan, Baoxing; Huang, Yunjia; Xing, Jingyu; Yang, Yintang
379.3-D Compact 3-dB Branch-Line Directional Couplers Based on Through-Silicon Via Technology for Millimeter-Wave Applications.IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY.2019.9.9.(1855-1862).Lu, Qijun; Zhu, Zhangming; Shan, Guangbao; Liu, Yang; Liu, Xiaoxian; Yin, Xiangkun
380.A 4.6-ppm/degrees C High-Order Curvature Compensated Bandgap Reference for BMIC.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS.2019.66.9.(1492-1496).Zhu, Guangqian; Yang, Yintang; Zhang, Qidong
381.Multi-user image encryption algorithm based on synchronized random bits generator in semiconductor lasers network.MULTIMEDIA TOOLS AND APPLICATIONS.2019.78.18.(26181-26201).Wang, Haoning; Xiang, Shuiying; Gong, Junkai
382.ZrO2 Ferroelectric FET for Non-volatile Memory Application.IEEE ELECTRON DEVICE LETTERS.2019.40.9.(1419-1422).Liu, Huan; Wang, Chengxu; Han, Genquan; Li, Jing; Peng, Yue; Liu, Yan; Wang, Xingsheng; Zhong, Ni; Duan, Chungang; Wang, Xinran; Xu, Nuo; Liu, Tsu-Jae King; Hao, Yue
383.Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2019.66.9.(3935-3939).Song, Qingwen; Yuan, Hao; Sun, Qiujie; Han, Chao; Tang, Xiaoyan; Zhang, Yimeng; Yuan, Lei; Yang, Shuai; Zhang, Yuming
384.A 6.3 GHz high bandwidth voltage-to-time converter with high linearity.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2019.100.3.(663-670).Duan, Jiangkun; Liu, Maliang; Zhu, Zhangming; Yang, Yintang
385.Enhanced sensitivity of grain sizes to precursor stoichiometry enables high-quality CH3NH3PbI3 films for efficient perovskite solar cells.MATERIALS LETTERS.2019.250.(88-91).Lu, Gang; Zhu, Weidong; He, Fengqin; Chen, Dazheng; Zhang, Chunfu; Hao, Yue
386.Influence of annealing temperature on structure and photoelectrical performance of beta-Ga2O3/4H-SiC heterojunction photodetectors.JOURNAL OF ALLOYS AND COMPOUNDS.2019.798.(458-466).Yu, Jiangang; Nie, Zizhuo; Dong, Linpeng; Yuan, Lei; Li, Dejun; Huang, Yu; Zhang, Lichun; Zhang, Yuming; Jia, Renxu
387.Fabrication and Characterization of High-Sensitivity Ultrasonic Transducers With Functionally Graded Design.IEEE SENSORS JOURNAL.2019.19.16.(6650-6654).Fei, Chunlong; Lin, Pengfei; Li, Di; Wu, Yan; Wu, Runcong; Chen, Jun; Yang, Yintang
388.Cluster synchronization in mutually-coupled semiconductor laser networks with different topologies.OPTICS COMMUNICATIONS.2019.445.(262-267).Han, Yanan; Xiang, Shuiying; Zhang, Liyue
389.Four-channels reservoir computing based on polarization dynamics in mutually coupled VCSELs system.OPTICS EXPRESS.2019.27.16.(23293-23306).Guo, Xing Xing; Xiang, Shui Ying; Zhang, Ya Hui; Lin, Lin; Wen, Ai Jun; Hao, Yue
390.Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure.RADIATION EFFECTS AND DEFECTS IN SOLIDS.2019.174.7-8.(697-707).Zhao, Xiaohong; Lu, Hongliang; Zhang, Yuming; Zhang, Yimen
391.Efficient planar perovskite solar cells with low-temperature atomic layer deposited TiO2 electron transport layer and interfacial modifier.SOLAR ENERGY.2019.188.(239-246).Chen, Dazheng; Su, Aixue; Li, Xueyi; Pang, Shangzheng; Zhu, Weidong; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
392.A Broadband Planar Balun Using Aperture-Coupled Microstrip-to-SIW Transition.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2019.29.8.(532-534).Zhang, Tao; Li, Lianming; Zhu, Zhangming; Cui, Tie Jun
393.A Multiplexing DAPD Technique for Fast-Locking and Charge Pumps Calibration in PLLs.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2019.29.8.(535-537).Liu, Shubin; Sun, Depeng; Ding, Ruixue; Huang, Sheng; Zhu, Zhangming
394.A 0.6-V pseudo-differential OTA with switched-opamp technique for low power applications.MICROELECTRONICS JOURNAL.2019.90.(117-122).Wang, Jingyu; Li, Yongyuan; Zhu, Zhangming
395.A Battery-Less Portable ECG Monitoring System With Wired Audio Transmission.IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS.2019.13.4.(697-709).Liu, Lianxi; He, Lei; Zhang, Yi; Hua, Tianyuan
396.Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs.IEEE TRANSACTIONS ON ELECTRON DEVICES.2019.66.8.(3302-3309).Zhang, Heng-Shuang; Ma, Xiao-Hua; Zhang, Meng; Lu, Yang; Zhu, Qing; Zhao, Zi-Yue; Yi, Chu-Peng; Yang, Lin-An; Ma, Pei-Jun; Hao, Yue
397.A 15-MHz bandwidth double sampling MASH2(5b)-1(5b) sigma-delta modulator with DEM for multibit DACs.INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS.2019.47.10.(1555-1567).Li, Di; Fei, Chunlong; Zhang, Qidong; Li, Yani; Wu, Xiaopeng; Yang, Yintang
398.Conductive polymer nanolayer modified one-dimensional ZnO/CdSe photoanode with enhanced photoelectrochemical properties by in-situ ions exchange method.CHEMICAL ENGINEERING JOURNAL.2019.368.(710-718).Wang, Lin; Han, Jing; Wu, Yijiang; Zhang, Yaping; Zhang, Qiang; Tan, Xuejiao; Yang, Yingzi; Li, Weibing; Bu, Yuyu; Ao, Jin-Ping
399.Luminescence landscapes of nitrogen-vacancy centers in diamond: quasi-localized vibrational resonances and selective coupling.JOURNAL OF MATERIALS CHEMISTRY C.2019.7.26.(8086-8091).Su, Zhicheng; Ren, Zeyang; Bao, Yitian; Lao, Xiangzhou; Zhang, Jinfeng; Zhang, Jincheng; Zhu, Deliang; Lu, Youming; Hao, Yue; Xu, Shijie
400.An efficient TeO2/Ag transparent top electrode for 20%-efficiency bifacial perovskite solar cells with a bifaciality factor exceeding 80%.JOURNAL OF MATERIALS CHEMISTRY A.2019.7.25.(15156-15163).Chen, Dazheng; Pang, Shangzheng; Zhou, Long; Li, Xueyi; Su, Aixue; Zhu, Weidong; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
401.Efficient NiOx Hole Transporting Layer Obtained by the Oxidation of Metal Nickel Film for Perovskite Solar Cells.ACS APPLIED ENERGY MATERIALS.2019.2.7.(4700-+).Pang, Shangzheng; Zhang, Chunfu; Dong, Hang; Chen, Dazheng; Zhu, Weidong; Xi, He; Chang, Jingjing; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue
402.Benign Pinholes in CsPbIBr2 Absorber Film Enable Efficient Carbon-Based, All-Inorganic Perovskite Solar Cells.ACS APPLIED ENERGY MATERIALS.2019.2.7.(5254-5262).Zhu, Weidong; Zhang, Zeyang; Chai, Wenming; Chen, Dazheng; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
403.Through-Silicon Capacitor Interconnection for High-Frequency 3-D Microsystem.IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY.2019.9.7.(1310-1318).Shan, Guangbao; Lu, Qijun; Liu, Song; Yang, Yintang
404.Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS.2019.30.13.(12577-12583).Wang, Xing; Liu, Hongxia; Zhao, Lu; Wang, Yongte; Wang, Shulong
405.Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes.APPLIED OPTICS.2019.58.19.(5339-5346).Liu, Aofei; Zhang, Junqin; Xing, Hailong; Yang, Yintang
406.Nanoelectromechanical Switches by Controlled Switchable Cracking.IEEE ELECTRON DEVICE LETTERS.2019.40.7.(1209-1212).Luo, Qiang; Guo, Zhe; Huang, Houbing; Zou, Qiming; Jiang, Xiangwei; Zhang, Shuai; Wang, Hongjuan; Song, Min; Zhang, Bao; Chen, Hong; Gu, Haoshuang; Han, Genquan; Yang, Xiaofei; Zou, Xuecheng; Wang, Kai-You; Liu, Zhiqi; Hong, Jeongmin; Ramesh, Ramamoorthy; You, Long
407.Effects of proton radiation on field limiting ring edge terminations in 4H-SiC junction barrier Schottky diodes.SCIENCE CHINA-TECHNOLOGICAL SCIENCES.2019.62.7.(1210-1216).Song, QingWen; Tang, XiaoYan; Han, Chao; Yuan, Hao; Yang, Shuai; He, XiaoNing; Zhang, YiMeng; Zhang, YiMen; Zhang, YuMing
408.Thermal-Aware Modeling and Analysis for a Power Distribution Network Including Through-Silicon-Vias in 3-D ICs.IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS.2019.38.7.(1278-1290).Zhu, Weijun; Dong, Gang; Yang, Yintang
409.An In0.53Ga0.47As/In0.52Al0.48As Heterojunction Dopingless Tunnel FET With a Heterogate Dielectric for High Performance.IEEE TRANSACTIONS ON ELECTRON DEVICES.2019.66.7.(3229-3235).Liu, Hu; Yang, Lin-An; Jin, Zhi; Hao, Yue
410.A Linear-Array Receiver Analog Front-End Circuit for Rotating Scanner LiDAR Application.IEEE SENSORS JOURNAL.2019.19.13.(5053-5061).Zheng, Hao; Ma, Rui; Liu, Maliang; Zhu, Zhangming
411.Enhancing material quality and device performance of perovskite solar cells via a facile regrowth way assisted by the DMF/Chlorobenzene mixed solution.ORGANIC ELECTRONICS.2019.70.(300-305).Chen, Dazheng; Dong, Hang; Pang, Shangzheng; Zhu, Weidong; Xi, He; Lin, Zhenhua; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
412.Exchange bias in defect-induced ferromagnetic SiC.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS.2019.481.(1-5).Wang, Yutian; Zhang, Ju; Peng, Bo; Zhang, Yuming; Guo, Hui
413.Intermediate Phase Halide Exchange Strategy toward a High-Quality, Thick CsPbBr3 Film for Optoelectronic Applications.ACS APPLIED MATERIALS & INTERFACES.2019.11.25.(22543-22549).Zhu, Weidong; Deng, Minyu; Zhang, Zeyang; Chen, Dazheng; Xi, He; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
414.Improvement of crystalline quality of N-polar green InGaN/GaN multiple quantum wells on vicinal substrate.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2019.96.(167-172).Du, Jinjuan; Xu, Shengrui; Lin, Zhiyu; Zhang, Yachao; Zhang, Jincheng; Zhao, Ying; Peng, Ruoshi; Fan, Xiaomeng; Niu, Mutong; Huang, Jun; Hao, Yue
415.Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications.ACS APPLIED ELECTRONIC MATERIALS.2019.1.6.(919-927).Xiao, Wenwu; Liu, Chen; Peng, Yue; Zheng, Shuaizhi; Feng, Qian; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue; Liao, Min; Zhou, Yichun
416.Recent progress on flexible inorganic single-crystalline functional oxide films for advanced electronics.MATERIALS HORIZONS.2019.6.5.(911-930).Zhang, Yong; Ma, Chunrui; Lu, Xiaoli; Liu, Ming
417.New view on the variation of forward conduction mechanisms derived from electrical stress in UV-A light emitting diodes.SUPERLATTICES AND MICROSTRUCTURES.2019.130.(208-214).Wang, Ying-Zhe; Zheng, Xue-Feng; Zhu, Jia-Duo; Li, Pei-Xian; Ma, Xiao-Hua; Hao, Yue
418.Band alignments at Hf1-xZrxO2/Si and Hf0.52Zr0.48O2/Si0.55Ge0.45 interfaces.SUPERLATTICES AND MICROSTRUCTURES.2019.130.(519-527).Peng, Yue; Han, Genquan; Xiao, Wenwu; Liu, Yan; Li, Qinglong; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
419.Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin Ni layer.SUPERLATTICES AND MICROSTRUCTURES.2019.130.(539-544).Tao, Hongchang; Xu, Shengrui; Mao, Wei; Fan, Xiaomeng; Du, Jinjuan; Peng, Ruoshi; Zhao, Ying; Li, Wen; Gao, Yuan; Zhang, Jincheng; Hao, Yue
420.Numerical Simulation of Planar Heterojunction Perovskite Solar Cells Based on SnO2 Electron Transport Layer.ACS APPLIED ENERGY MATERIALS.2019.2.6.(4504-4512).Zhao, Peng; Lin, Zhenhua; Wang, Jiaping; Yue, Man; Su, Jie; Zhang, Jincheng; Chang, Jingjing; Hao, Yue
421.A 12-GHz Wideband Fractional-N PLL With Robust VCO in 65-nm CMOS.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2019.29.6.(397-399).Huang, Sheng; Liu, Shubin; Hu, Jin; Wang, Riyan; Zhu, Zhangming
422.Multiple-layer black phosphorus phototransistor with Si microdisk resonator based on whispering gallery modes.APPLIED OPTICS.2019.58.16.(4400-4405).Zhang, Siqing; Huang, Yan; Liu, Yan; Shao, Yao; Fang, Cizhe; Han, Genquan; Zhang, Jincheng; Hao, Yue
423.A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High-Linearity Applications.IEEE ELECTRON DEVICE LETTERS.2019.40.6.(846-849).Wu, Sheng; Ma, Xiaohua; Yang, Ling; Mi, Minhan; Zhang, Meng; Wu, Mei; Lu, Yang; Zhang, Hengshuang; Yi, Chupeng; Hao, Yue
424.A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation.IEEE ELECTRON DEVICE LETTERS.2019.40.6.(989-992).Zhao, Yang; Liang, Zhongxin; Huang, Qianqian; Chen, Cheng; Yang, Mengxuan; Sun, Zixuan; Zhu, Kunkun; Wang, Huimin; Liu, Shuhan; Liu, Tianyi; Peng, Yue; Han, Genquan; Huang, Ru
425.Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS.2019.30.11.(10302-10310).Jia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Han, Chao; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng; Haasmann, Daniel
426.Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory.IEEE TRANSACTIONS ON ELECTRON DEVICES.2019.66.6.(2595-2599).Lin, Chun-Chu; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Chun-Kuei; Huang, Wei-Chen; Chen, Wen-Chung; Huang, Hui-Chun; Tsai, Tsung-Ming; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.
427.A high linear voltage-to-time converter (VTC) with 1.2 V input range for time-domain analog-to-digital converters.MICROELECTRONICS JOURNAL.2019.88.(18-24).Liu, Haizhu; Liu, Maliang; Zhu, Zhangming; Yang, Yintang
428.Broadband inductance modeling of TXVs for 3D interconnection.MICROELECTRONICS JOURNAL.2019.88.(56-60).Liu, Yang; Zhu, Zhangming; Liu, Xiaoxian; Guo, Lixin; Yang, Yintang
429.Interface engineering of low temperature processed all-inorganic CsPbI2Br perovskite solar cells toward PCE exceeding 14%.NANO ENERGY.2019.60.(583-590).Zhou, Long; Guo, Xing; Lin, Zhenhua; Ma, Jing; Su, Jie; Hu, Zhaosheng; Zhang, Chunfu; Liu, Shengzhong (Frank); Chang, Jingjing; Hao, Yue
430.Band Alignment Engineering Towards High Efficiency Carbon-Based Inorganic Planar CsPbIBr2 Perovskite Solar Cells.CHEMSUSCHEM.2019.12.10.(2318-2325).Zhu, Weidong; Zhang, Zeyang; Chai, Wenming; Zhang, Qianni; Chen, Dazheng; Lin, Zhenhua; Chang, Jingjing; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
431.10 MHz boost converter with subthreshold voltage startup and predictive dead-time techniques for energy-harvesting systems.IET POWER ELECTRONICS.2020.13.10.(2139-2148).Huang, Wenbin; Liao, Xufeng; Liu, Lianxi
432.Mo incorporated Ni nanosheet as high-efficiency co-catalyst for enhancing the photocatalytic hydrogen production of g-C3N4.INTERNATIONAL JOURNAL OF HYDROGEN ENERGY.2020.45.38.(18912-18921).Tong, Rui; Sun, Zhi; Wang, Xina; Yang, Liming; Zhai, Jiwei; Wang, Shuangpeng; Pan, Hui
433.Flexible low-power source-gated transistors with solution-processed metal-oxide semiconductors.NANOSCALE.2020.12.42.(21610-21616).Li, Dingwei; Zhao, Momo; Liang, Kun; Ren, Huihui; Wu, Quantan; Wang, Hong; Zhu, Bowen
434.Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation.NANO LETTERS.2020.20.11.(8015-8023).Wu, Quantan; Dang, Bingjie; Lu, Congyan; Xu, Guangwei; Yang, Guanhua; Wang, Jiawei; Chuai, Xichen; Lu, Nianduan; Geng, Di; Wang, Hong; Li, Ling
435.Structural, Elastic, Thermodynamic and Anisotropic Properties of T14-Carbon under Pressure.ACTA PHYSICA POLONICA A.2020.138.3.(518-527).Wei, Ming-Fei; Zhang, Qi-Dong
436.Neural Networks Probability-Based PWL Sigmoid Function Approximation.IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS.2020.E103D.9.(2023-2026).Nguyen, Vantruong; Cai, Jueping; Wei, Linyu; Chu, Jie
437.Leakage Current Reduction in beta-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment.IEEE ELECTRON DEVICE LETTERS.2020.41.9.(1312-1315).Luo, Haoxun; Jiang, Huaxing; Chen, Zimin; Pei, Yanli; Feng, Qian; Zhou, Hong; Lu, Xing; Lau, Kei May; Wang, Gang
438.A novel fabrication technique for three-dimensional concave nanolens arrays.JOURNAL OF MATERIOMICS.2020.6.3.(557-562).Duan, Tianli; Xu, Kang; Liu, Zhihong; Gu, Chenjie; Pan, Jisheng; Ang, Diing Shenp; Zhang, Rui; Wang, Yao; Ma, Xuhang
439.A 1.8 GHz temperature drift compensated LC-VCO for RFID transceiver.ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.2020.105.1.(7-12).Liu, Qingshan; Chai, Changchun
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